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Vishay Intertechnologies SI7973DP-T1-E3 MOSFETs 12V 12.8A 1.4W
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Mouser Electronics	SI7973DP-T1-E3					1 - 10 - 100 - 1000 - 10000 $1.33	Get Quote
Vishay Intertechnologies SI7973DP-T1-GE3 MOSFETs 12V 12.8A 3.5W 15mohm @ 4.5V
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Mouser Electronics	SI7973DP-T1-GE3					1 - 10 - 100 - 1000 - 10000 $1.33	Get Quote

SI7973DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7973DP		Vishay Siliconix	MOSFETs		Original	PDF

SI7973DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated	Original	Si7973DP Si7973DP-T1 18-Jul-08	PDF
Si7973DP Abstract: No abstract text available Text: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated	Original	Si7973DP Si7973DP-T1 S-32129--Rev. 27-Oct-03	PDF
Untitled Abstract: No abstract text available Text: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated	Original	Si7973DP Si7973DP-T1 08-Apr-05	PDF
73708 Abstract: AN609 Si7973DP Text: Si7973DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si7973DP AN609 10-Jan-06 73708	PDF
Si7973DP Abstract: No abstract text available Text: SPICE Device Model Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7973DP 18-Jul-08	PDF
Si7973DP Abstract: No abstract text available Text: Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 12.8 0.019 at VGS = - 2.5 V - 11.4 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available	Original	Si7973DP Si7973DP-T1-E3 Si7973DP-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 12.8 0.019 at VGS = - 2.5 V - 11.4 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available	Original	Si7973DP Si7973DP-T1-E3 Si7973DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF