Untitled
Abstract: No abstract text available
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
O-220
O-220
IRFB17N50Lmerchantability,
12-Mar-07
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r 3589
Abstract: AN609 IRFB17N50L SiHFB17N50L
Text: IRFB17N50L_RC, SiHFB17N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRFB17N50L
SiHFB17N50L
AN609,
16-Apr-10
r 3589
AN609
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Untitled
Abstract: No abstract text available
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
SiHFB17N50L
Abstract: IRFB17N50L SiHFB17N50L-E3
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
O-220
18-Jul-08
IRFB17N50L
SiHFB17N50L-E3
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irfb17n50l
Abstract: No abstract text available
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfb17n50l
|
IRFB17N50L
Abstract: No abstract text available
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
2002/95/EC
O-220AB
11-Mar-11
IRFB17N50L
|
Untitled
Abstract: No abstract text available
Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB17N50L,
SiHFB17N50L
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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