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Catalog Datasheet	MFG & Type	PDF	Document Tags
SiHFI634G Abstract: IRFI634G SiHFI634G-E3 Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI634G, SiHFI634G O-220 18-Jul-08 IRFI634G SiHFI634G-E3
SiHFI634G Abstract: No abstract text available Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI634G, SiHFI634G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiHFI634G Abstract: IRFI634G SiHFI634G-E3 Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI634G, SiHFI634G O-220 18-Jul-08 IRFI634G SiHFI634G-E3
SiHFI634G Abstract: No abstract text available Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI634G, SiHFI634G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SiHFI634G Abstract: No abstract text available Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI634G, SiHFI634G O-220 12-Mar-07
SiHFI634G Abstract: No abstract text available Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI634G, SiHFI634G O-220 11-Mar-11
3987 Abstract: AN609 IRFI634G SiHFI634G 15317 Text: IRFI634G_RC, SiHFI634G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFI634G SiHFI634G AN609, 10-May-10 3987 AN609 15317
SiHFI634G Abstract: No abstract text available Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI634G, SiHFI634G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12