SiHFI9540G
Abstract: No abstract text available
Text: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
IRFI9540G,
SiHFI9540G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
SiHFI9540G
Abstract: IRFI9540G SiHFI9540G-E3
Text: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
IRFI9540G,
SiHFI9540G
O-220
18-Jul-08
IRFI9540G
SiHFI9540G-E3
|
PDF
|
AN609
Abstract: IRFI9540G SiHFI9540G
Text: IRFI9540G_RC, SiHFI9540G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
IRFI9540G
SiHFI9540G
AN609,
11-May-10
AN609
|
PDF
|
SiHFI9540G
Abstract: SiHFI9540G-E3 IRFI9540G
Text: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
IRFI9540G,
SiHFI9540G
O-220
18-Jul-08
SiHFI9540G-E3
IRFI9540G
|
PDF
|
SiHFI9540G
Abstract: No abstract text available
Text: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
IRFI9540G,
SiHFI9540G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
SiHFI9540G
Abstract: IRFI9540G
Text: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
IRFI9540G,
SiHFI9540G
O-220
11-Mar-11
IRFI9540G
|
PDF
|
V61-14
Abstract: No abstract text available
Text: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
IRFI9540G,
SiHFI9540G
O-220
12-Mar-07
V61-14
|
PDF
|
SiHFI9540G
Abstract: No abstract text available
Text: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
IRFI9540G,
SiHFI9540G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|