Untitled
Abstract: No abstract text available
Text: IRFZ14_RC, SiHFZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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IRFZ14
SiHFZ14
AN609,
CONFIGURATI8-Aug-10
7073m
5021m
4092u
3752m
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PDF
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IRFZ14L
Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)
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Original
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
O-263)
O-262)
IRFZ14L
IRFZ14S
SiHFZ44L
IRFZ14STRL
SiHFZ14L-E3
SiHFZ14S-E3
SiHFZ14STL
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PDF
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IRFZ14PBF
Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRFZ14,
SiHFZ14
O-220
O-220
18-Jul-08
IRFZ14PBF
IRFZ14
SiHFZ14-E3
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
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Original
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
2002/95/EC
2002/95/EC.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
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Original
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
2002/95/EC
11-Mar-11
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14S-L_RC, SiHFZ14S-L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFZ14S-L
SiHFZ14S-L
AN609,
5914m
0559m
6073u
3031m
5735m
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
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Original
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
2002/95/EC
11-Mar-11
|
PDF
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IRFZ14
Abstract: No abstract text available
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRFZ14,
SiHFZ14
O-220
12-Mar-07
IRFZ14
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PDF
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IRFZ14
Abstract: SiHFZ14 SiHFZ14-E3 D. S. /N. 1677
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRFZ14,
SiHFZ14
2002/95/EC
O-220
O-220
18-Jul-08
IRFZ14
SiHFZ14-E3
D. S. /N. 1677
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements
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Original
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IRFZ14,
SiHFZ14
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFZ14
Abstract: SiHFZ14 SiHFZ14-E3
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements
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Original
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IRFZ14,
SiHFZ14
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRFZ14
SiHFZ14-E3
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PDF
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IRFZ14L
Abstract: IRFZ14S IRFZ14STRL SiHFZ14L SiHFZ14S SiHFZ14STL SiHFZ44L
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21
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Original
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
O-263)
O-262)
IRFZ14L
IRFZ14S
IRFZ14STRL
SiHFZ14STL
SiHFZ44L
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PDF
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SiHFZ44L
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)
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Original
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
IRFZ14S/SiHFZ14S)
IRFZ14L/SiHFZ14L)
18-Jul-08
SiHFZ44L
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements
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Original
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IRFZ14,
SiHFZ14
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements
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Original
|
IRFZ14,
SiHFZ14
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)
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Original
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
IRFZ14S/SiHFZ14S)
IRFZ14L/SiHFZ14L)
12-Mar-07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements
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Original
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IRFZ14,
SiHFZ14
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
2002/95/EC
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
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Original
|
IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
2002/95/EC
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements
|
Original
|
IRFZ14,
SiHFZ14
2002/95/EC
O-220AB
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements
|
Original
|
IRFZ14,
SiHFZ14
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|