IRFZ40PBF
Abstract: No abstract text available
Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements
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Original
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IRFZ40,
SiHFZ40
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFZ40PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements
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Original
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IRFZ40,
SiHFZ40
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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IRFZ40PBF
Abstract: IRFZ40 SiHFZ40 SiHFZ40-E3 marking 0936
Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25
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Original
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IRFZ40,
SiHFZ40
2002/95/EC
O-220
18-Jul-08
IRFZ40PBF
IRFZ40
SiHFZ40-E3
marking 0936
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PDF
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IRFZ40
Abstract: SiHFZ40 SiHFZ40-E3
Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements
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Original
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IRFZ40,
SiHFZ40
2002/95/EC
O-220AB
11-Mar-11
IRFZ40
SiHFZ40-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements
|
Original
|
IRFZ40,
SiHFZ40
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements
|
Original
|
IRFZ40,
SiHFZ40
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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AN609
Abstract: IRFZ40 SiHFZ40 147381 SiHFZ
Text: IRFZ40_RC, SiHFZ40_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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IRFZ40
SiHFZ40
AN609,
1481m
7162m
7438m
2295m
4509m
8037m
4060m
AN609
147381
SiHFZ
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PDF
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