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Vishay Siliconix SIHW33N60E-GE3 MOSFET N-CH 600V 33A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHW33N60E-GE3	Tube			1	1 $5.06 10 $3.425 100 $3.425 1000 $5.06 10000 $5.06	Buy Now
Vishay Intertechnologies SIHW33N60E-GE3 N-CHANNEL 600V - Tape and Reel (Alt: SIHW33N60E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHW33N60E-GE3	Reel		19 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	SIHW33N60E-GE3		230			1 $6.08 10 $4.11 100 $4.11 1000 $3 10000 $3	Buy Now
Newark	SIHW33N60E-GE3	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	SIHW33N60E-GE3		272			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIHW33N60E-GE3		217			1 $7.272 10 $7.272 100 $4.4844 1000 $4.4844 10000 $4.4844	Buy Now

TTI	SIHW33N60E-GE3	Tube			480	1 - 10 - 100 - 1000 $3 10000 $3	Buy Now

SIHW33N60E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHW33N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 33A TO-247AD		Original	PDF

SIHW33N60E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses	Original	PDF	SiHW33N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiHW33N60E Abstract: No abstract text available Text: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses	Original	PDF	SiHW33N60E O-247AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses	Original	PDF	SiHW33N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
TO-247 FULLPAK Package Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction	Original	PDF	enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E