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    SIHW33N60E Price and Stock

    Vishay Siliconix SIHW33N60E-GE3

    MOSFET N-CH 600V 33A TO247AD
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    DigiKey SIHW33N60E-GE3 Tube 1
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    Vishay Intertechnologies SIHW33N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHW33N60E-GE3)
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    Avnet Americas SIHW33N60E-GE3 Reel 19 Weeks 500
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    Newark SIHW33N60E-GE3 Bulk 500
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    Mouser Electronics SIHW33N60E-GE3 230
    • 1 $6.08
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    Bristol Electronics SIHW33N60E-GE3 272
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    Quest Components SIHW33N60E-GE3 217
    • 1 $7.272
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    TTI SIHW33N60E-GE3 Tube 480
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    SIHW33N60E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHW33N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 33A TO-247AD Original PDF

    SIHW33N60E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHW33N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHW33N60E

    Abstract: No abstract text available
    Text: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHW33N60E O-247AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHW33N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E