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    SIR416DP Price and Stock

    Vishay Intertechnologies SIR416DP-T1-GE3

    N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SIR416DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR416DP-T1-GE3 Reel 3,000 18 Weeks 3,000
    • 1 -
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    • 10000 $0.4875
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    Mouser Electronics SIR416DP-T1-GE3 6,613
    • 1 $1.5
    • 10 $1.14
    • 100 $0.83
    • 1000 $0.602
    • 10000 $0.487
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    Verical SIR416DP-T1-GE3 3,000 3,000
    • 1 -
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    • 10000 $0.5198
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    Arrow Electronics SIR416DP-T1-GE3 3,000 18 Weeks 3,000
    • 1 -
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    • 10000 $0.5151
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    SIR416DP-T1-GE3 Cut Strips 1 18 Weeks 1
    • 1 $0.1009
    • 10 $0.1009
    • 100 $0.1009
    • 1000 $0.1009
    • 10000 $0.1009
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    Newark SIR416DP-T1-GE3 Cut Tape 2,765 1
    • 1 $1.41
    • 10 $1.18
    • 100 $0.938
    • 1000 $0.938
    • 10000 $0.938
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    SIR416DP-T1-GE3 Reel 3,000
    • 1 -
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    • 10000 $0.519
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    Bristol Electronics SIR416DP-T1-GE3 365
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    TTI SIR416DP-T1-GE3 Reel 6,000 3,000
    • 1 -
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    • 10000 $0.488
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    TME SIR416DP-T1-GE3 3,000
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    • 10000 $0.77
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    Avnet Asia SIR416DP-T1-GE3 20 Weeks 3,000
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    EBV Elektronik SIR416DP-T1-GE3 3,000 22 Weeks 3,000
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    New Advantage Corporation SIR416DP-T1-GE3 3,000 1
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    • 10000 $1
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    Vishay Siliconix SIR416DP-T1-GE3

    SIR416DP-T1-GE3 N-channel MOSFET Transistor, 27 A, 40 V, 8-Pin PowerPAK SO | Siliconix / Vishay SIR416DP-T1-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIR416DP-T1-GE3 Bulk 3,000
    • 1 -
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    • 10000 $0.9
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    Vishay Huntington SIR416DP-T1-GE3

    MOSFET N-CH 40V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR416DP-T1-GE3 16,451
    • 1 -
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    • 100 $0.7771
    • 1000 $0.5181
    • 10000 $0.5181
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    SIR416DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR416DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 50A PPAK 8SOIC Original PDF

    SIR416DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR416DP 2002/95/EC SiR416DP-T1-GE3 11-Mar-11

    SIR416DP-T1-GE3

    Abstract: SiR416DP
    Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR416DP 2002/95/EC SiR416DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR416DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR416DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR416DP 2002/95/EC SiR416DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR416DP 2002/95/EC SiR416DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    D 1556

    Abstract: SiR416DP
    Text: SPICE Device Model SiR416DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR416DP 18-Jul-08 D 1556

    SiR416DP

    Abstract: SiR416DP-T1-GE3 64985
    Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR416DP 2002/95/EC SiR416DP-T1-GE3 11-Mar-11 64985

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR416DP 2002/95/EC SiR416DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR416DP 2002/95/EC SiR416DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    C 3205

    Abstract: AN609 SiR416DP
    Text: SiR416DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR416DP AN609, 16-Jun-09 C 3205 AN609

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477