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    SIS476DN Price and Stock

    Vishay Siliconix SIS476DN-T1-GE3

    MOSFET N-CH 30V 40A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS476DN-T1-GE3 Digi-Reel 14,016 1
    • 1 $1.72
    • 10 $1.089
    • 100 $1.72
    • 1000 $0.52593
    • 10000 $0.52593
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    SIS476DN-T1-GE3 Cut Tape 14,016 1
    • 1 $1.72
    • 10 $1.089
    • 100 $1.72
    • 1000 $0.52593
    • 10000 $0.52593
    		Buy Now
    SIS476DN-T1-GE3 Reel 9,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.46297
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    RS SIS476DN-T1-GE3 Bulk 3,000
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    • 10000 $0.87
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    Vishay Intertechnologies SIS476DN-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS476DN-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIS476DN-T1-GE3 Reel 12,000 17 Weeks 3,000
    • 1 -
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    • 10000 $0.4029
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    Newark SIS476DN-T1-GE3 Reel 12,000 3,000
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    • 10000 $0.63
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    SIS476DN-T1-GE3 Reel 3,000
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    • 10000 $0.649
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    SIS476DN-T1-GE3 Cut Tape 3,000
    • 1 -
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    • 100 $0.947
    • 1000 $0.947
    • 10000 $0.947
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    Mouser Electronics SIS476DN-T1-GE3 66,747
    • 1 $1.32
    • 10 $0.894
    • 100 $0.628
    • 1000 $0.486
    • 10000 $0.432
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    TTI SIS476DN-T1-GE3 Reel 21,000 3,000
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    • 1000 -
    • 10000 $0.407
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    TME SIS476DN-T1-GE3 1
    • 1 $1.027
    • 10 $0.853
    • 100 $0.639
    • 1000 $0.538
    • 10000 $0.538
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    Avnet Asia SIS476DN-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SIS476DN-T1-GE3 18 Weeks 3,000
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    Vishay Huntington SIS476DN-T1-GE3

    MOSFET N-CH 30V 40A 1212-8 PWR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIS476DN-T1-GE3 72,936
    • 1 -
    • 10 -
    • 100 $0.6416
    • 1000 $0.4278
    • 10000 $0.4278
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    SIS476DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS476DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 1212-8 PWR Original PDF

    SIS476DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


    Original     		SiS476DN 2002/95/EC SiS476DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS476DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS476DN 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


    Original     		SiS476DN 2002/95/EC SiS476DN-T1-GE3 11-Mar-11 PDF

    mosfet equivalent 2310

    Abstract: TSOP 86 land pattern
    Text: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


    Original     		SiS476DN 2002/95/EC SiS476DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 mosfet equivalent 2310 TSOP 86 land pattern PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS476DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS476DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS476DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiS476DN AN609, 5031m 3105u 2084m 2291m 7882m 5191m 0227u 15-Nov-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


    Original     		SiS476DN 2002/95/EC SiS476DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    TSOP 86 land pattern

    Abstract: mosfet equivalent 2310
    Text: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


    Original     		SiS476DN 2002/95/EC SiS476DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 86 land pattern mosfet equivalent 2310 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


    Original     		SiS476DN 2002/95/EC SiS476DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 PDF

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32 PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF