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    UGF2016 Search Results

    UGF2016 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF2016 Cree LDMOS FETs in Class AB Operation 1900 MHz Cellular Original PDF
    UGF2016F Cree FET Transistor, 16W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UGF2016 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    cree rf

    Abstract: UGF2016 UGF2016F cree MOS F1840
    Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UGF2016 30dBc UGF2016 cree rf UGF2016F cree MOS F1840 PDF

    Untitled

    Abstract: No abstract text available
    Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UGF2016 30dBc UGF2016F UGF2016 150mA, UGF2016F PDF

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b PDF