UGF2016 Search Results

UGF2016 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UGF2016		Cree	LDMOS FETs in Class AB Operation 1900 MHz Cellular		Original	PDF
UGF2016F		Cree	FET Transistor, 16W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UGF2016 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
cree rf Abstract: UGF2016 UGF2016F cree MOS F1840 Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	UGF2016 30dBc UGF2016 cree rf UGF2016F cree MOS F1840	PDF
Untitled Abstract: No abstract text available Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	UGF2016 30dBc UGF2016F UGF2016 150mA, UGF2016F	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

cree rf

Abstract: UGF2016 UGF2016F cree MOS F1840
Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

Original

UGF2016 30dBc UGF2016 cree rf UGF2016F cree MOS F1840

PDF

Untitled

Abstract: No abstract text available
Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

Original

UGF2016 30dBc UGF2016F UGF2016 150mA, UGF2016F

PDF

semiconductors cross reference

Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30

Original

BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b

PDF