ABB SEMICONDUCTORS THYRISTOR Search Results

ABB SEMICONDUCTORS THYRISTOR Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

ABB SEMICONDUCTORS THYRISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
3 phase motor soft starter circuit diagram, ABB Abstract: abb SOFT STARTER CIRCUIT DIAGRAM thyristor testing 3 phase motor soft starter circuit diagram 3 phase motor soft starter diagram all types of thyristor and schematic igtb ABB Thyristor 1000 A thyristor ABB thyristor 5 Text: Bi-Directional Control Thyristor Product Information ABB Semiconductors AG Bi-Directional Control Thyristor Product Information Björn Backlund, Jan-Olav Boeriis, Ken Thomas, Robert Waishar, Jürg Waldmeyer, Orhan Toker ABB Semiconductors AG February 1999.	Original		PDF
abb traction motor Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12 Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the	Original	CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12	PDF
GTO thyristor Curve properties Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1 Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by	Original	30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1	PDF
thyristor Q 720 Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200 Text: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor	Original	1960s, 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 thyristor Q 720 thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200	PDF
GTO hvdc thyristor Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB Text: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives	Original	5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 CH-5600 GTO hvdc thyristor 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB	PDF
IGCT thyristor ABB Abstract: IGCT Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency	Original	19L6020 5SYA1250-00 CH-5600 IGCT thyristor ABB IGCT	PDF
30J4502 Abstract: capacitor abb 5sgf30j4502 GTO thyristor ABB Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 1.80 rT = 0.70 VDClink = 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V Doc. No. 5SYA 1211-04 April 98 Features The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static	Original	30J4502 30J4502 CH-5600 capacitor abb 5sgf30j4502 GTO thyristor ABB	PDF
GTO thyristor ABB Abstract: ABB 5SGA ABB GTO ABB thyristor 5 Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 1500 10 1.55 0.63 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	15F2502 CH-5600 GTO thyristor ABB ABB 5SGA ABB GTO ABB thyristor 5	PDF
GTO thyristor ABB Abstract: reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5 Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.90 0.70 2800 V A kA V mΩ V Reverse Conducting Gate turn-off Thyristor 5SGR 30L4502 Doc. No. 5SYA 1216-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses	Original	30L4502 30L4502 CH-5600 GTO thyristor ABB reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5	PDF
ABB 5STP 16F2600 Abstract: 5STP 16F2600 16F2200 5STP 16F2800 16F2800 ABB 5STP 12 5STP16F2200 Text: Key Parameters VDSM = 2800 ITAVM = 1580 ITRMS = 2480 ITSM = 18000 VT0 = 0.82 rT = 0.370 V A A A V mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA 1022-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	16F2800 16F2800 16F2600 16F2200 67xVDRM CH-5600 ABB 5STP 16F2600 5STP 16F2600 5STP 16F2800 ABB 5STP 12 5STP16F2200	PDF
21F1400 Abstract: 5STP21F1200 abb 26000 Text: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	21F1400 21F1400 21F1200 21F0800 67xVDRM CH-5600 5STP21F1200 abb 26000	PDF
5STP 07D1200 Abstract: 5STP 07D1600 5STP07D1600 07d18 Text: Key Parameters VDSM = 1800 ITAVM = 700 ITRMS = 1090 ITSM = 9000 VT0 = 0.80 rT = 0.540 V A A A V mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA 1027-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	07D1800 07D1800 07D1600 07D1200 67xVDRM CH-5600 5STP 07D1200 5STP 07D1600 5STP07D1600 07d18	PDF
IGCT thyristor ABB Abstract: high power igct abb 5SHX 08F4502 abb cs 400 Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 Doc. No. 5SYA 1223-04 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs	Original	08F4502 CH-5600 IGCT thyristor ABB high power igct abb 5SHX 08F4502 abb cs 400	PDF
5SHX26L4520 Abstract: tc 106-10 5SHX 26L4520 IGCT thyristor ABB DIODE 1439 Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4520 Doc. No. 5SYA1251-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency	Original	26L4520 5SYA1251-00 CH-5600 5SHX26L4520 tc 106-10 5SHX 26L4520 IGCT thyristor ABB DIODE 1439	PDF

5STP06D2600 Abstract: No abstract text available Text: Key Parameters VDSM = 2800 ITAVM = 590 ITRMS = 920 ITSM = 8000 VT0 = 0.92 rT = 0.780 V A A A V mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA 1020-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	06D2800 06D2800 06D2600 06D2200 67xVDRM CH-5600 5STP06D2600	PDF
5STP24H2800 Abstract: ABB 5STP abb S 24H220 24H2600 24H2800 Text: Key Parameters VDSM = 2800 ITAVM = 2625 ITRMS = 4120 ITSM = 43000 VT0 = 0.85 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA 1047-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	24H2800 24H2800 24H2600 24H2200 67xVDRM CH-5600 5STP24H2800 ABB 5STP abb S 24H220	PDF
ABB 5STP 12 Abstract: 24L00 5STP IG 2200 19 5stp 45n 3600 5STP 18L 3600 05mm2 ABB Semiconductors DDQ001S abb phase control thyristors Text: Phase Control Thyristors ABB Semiconductors AG I II V DSM •t a v m < t y p e and ordering n um ber Patentierter freier Druckkontakt. Ausgelegt für Hochleistungsanwendungen in der Industrie und Energieübertragung. Optimiert für tiefe Durchlaßspannungen.	OCR Scan	10STP D01bfi3fl DDQ001S ABB 5STP 12 24L00 5STP IG 2200 19 5stp 45n 3600 5STP 18L 3600 05mm2 ABB Semiconductors abb phase control thyristors	PDF
05D2500 Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.	OCR Scan	15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV	PDF
Abb breakover diode Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800 Text: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole rance V >	OCR Scan	VBO/100 VR/100 Abb breakover diode BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800	PDF
ABB EH 1200 Abstract: ABB 5STP 12 ABB EH 250 5STP45N 5stp 6 abb phase control thyristors 5STP 4 5STP 12 ABB 5STP 07D Text: Phase Control Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. Designed for high pow er industrial and energy m anagem ent applications. O ptim ized for low on-state voltage drop. M atched Q rr and VT values available for series and/or parallel connection.	OCR Scan	VDSM/100 Tc-70 5STP45N 5STP34N-00 001b63fi Q01bfl3fl DD00071 ABB EH 1200 ABB 5STP 12 ABB EH 250 5stp 6 abb phase control thyristors 5STP 4 5STP 12 ABB 5STP 07D	PDF
fast thyristor Abstract: fast turn on thyristor 5STF cross reference thyristor FAST SWITCHING THYRISTOR Text: Fast Switching Thyristors ABB Semiconductors AG I Sym m etrische oder asym m etrische Sperrfähigkeit. Kleine Schattverluste. Kurze Freiwerdezeiten. Verzw eigte G ate-S truktur mit Z ündver stärkung für schnelles Einschalten und hohes di/dt. S ym m etrically or asym m etrically	OCR Scan	VDRM/100 7x100 30x100 tq/10 26x100 65x100 000G073 fast thyristor fast turn on thyristor 5STF cross reference thyristor FAST SWITCHING THYRISTOR	PDF
FAST SWITCHING THYRISTOR Abstract: asymmetric thyristor ABB thyristor 5 Faston 6.3x0,8 Text: Fast Switching Thyristors ABB Semiconductors AG I S ym m etrically o r asym m etrically blocking. Low sw itching losses. Short turn-off time. Interdigitated am plifying gate for fast turn-on and high di/dt. Type and ordering number VDRM VRRM Sym m etrische oder asym m etrische	OCR Scan	5STF06D 7x100 30x100 tq/10 26x100 65x100 FAST SWITCHING THYRISTOR asymmetric thyristor ABB thyristor 5 Faston 6.3x0,8	PDF
ABB 5SGA Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s	OCR Scan	15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502	PDF
5stf08f Abstract: S2000V fjs 500 ABB thyristor CROSS REFERENCE LIST 7085c 5STF Text: Fast Switching Thyristors ABB Semiconductors AG I Low sw itching losses. Short tu rn -o ff time. Interdigitated am plifying gate for fast turn-on and high di/dt. T yp e and ordering num ber Kleine Schaltverluste. Kurze Freiwerdezeiten. Verzw eigte G ate-S truktur mit Z ün d ve r	OCR Scan	VDRM/100 16ary 30x100 tq/10 65x100 5stf08f S2000V fjs 500 ABB thyristor CROSS REFERENCE LIST 7085c 5STF	PDF

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ABB SEMICONDUCTORS THYRISTOR Search Results

ABB SEMICONDUCTORS THYRISTOR Result Highlights (5)

ABB SEMICONDUCTORS THYRISTOR Datasheets Context Search

3 phase motor soft starter circuit diagram, ABB

abb traction motor

GTO thyristor Curve properties

thyristor Q 720

GTO hvdc thyristor

IGCT thyristor ABB

30J4502

GTO thyristor ABB

GTO thyristor ABB

ABB 5STP 16F2600

21F1400

5STP 07D1200

IGCT thyristor ABB

5SHX26L4520

5STP06D2600

5STP24H2800

ABB 5STP 12

05D2500

Abb breakover diode

ABB EH 1200

fast thyristor

FAST SWITCHING THYRISTOR

ABB 5SGA

5stf08f