ID84
Abstract: 260uH LZP80N06P
Text: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools
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LZP80N06P
above25
to175
ID84
260uH
LZP80N06P
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KHB3D0N90F1
Abstract: KHB3D0N90F2 KHB3D0N90P1 D 92 M - 02 DIODE
Text: SEMICONDUCTOR KHB3D0N90P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB3D0N90P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB3D0N90P1/F1/F2
KHB3D0N90P1
KHB3D0N90F1
KHB3D0N90F2
KHB3D0N90P1
D 92 M - 02 DIODE
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KHB9D0N50F1
Abstract: KHB9D0N50P1 HW150 ID9AJ
Text: SEMICONDUCTOR KHB9D0N50P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1
KHB9D0N50F1
KHB9D0N50P1
HW150
ID9AJ
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7000K
Abstract: No abstract text available
Text: Technical Data Sheet Top View LEDs 61-238UMC/S3085/TR8/LT Features ․Super-luminosity chip LED. ․White SMT package. ․Lead frame package with individual 6 pins. ․Wide viewing angle. ․Soldering methods: IR reflow soldering. ․Pb-free. ․The product itself will remain within RoHS
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61-238UMC/S3085/TR8/LT
DSE-0003676
09-Aug
7000K
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"VDSS 800V" 40A mosfet
Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB4D0N80P1/F1/F2
KHB4D0N80P1
"VDSS 800V" 40A mosfet
800V 40A mosfet
KHB4D0N80F1
KHB4D0N80F2
KHB4D0N80P1
khb*4D0N80F2
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KHB011N40P1
Abstract: KHB011N40F1
Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB011N40P1/F1
KHB011N40P1
KHB011N40P1
KHB011N40F1
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D 92 M - 02 DIODE
Abstract: c 92 M - 02 DIODE jd150 KHB3D0N70F KHB3D0N70P
Text: SEMICONDUCTOR KHB3D0N70P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB3D0N70P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
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KHB3D0N70P/F
KHB3D0N70P
D 92 M - 02 DIODE
c 92 M - 02 DIODE
jd150
KHB3D0N70F
KHB3D0N70P
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khb*2D0N60P
Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB2D0N60P/F/F2
KHB2D0N60P
Fig15.
Fig16.
Fig17.
khb*2D0N60P
KHB2D0N60F
KHB2D0N60P
khb*2d0n60f
KHB2D0N60F2
KHB2D0N60F equivalent
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General Purpose Transistors
Abstract: FHT847 FHT847C
Text: ᄰྯ General Purpose Transistors General Purpose Transistors ᄰྯ FHT846/847/848 DESCRIPTION & FEATURES 概述及特點 Excellent hFE Linearity hFE 線性特性極好 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME PIN NUMBER 引腳序號
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FHT846/847/848
OT-23
OT-23
FHT846
FHT847
FHT848
General Purpose Transistors
FHT847C
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB011N40P1/F1
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Untitled
Abstract: No abstract text available
Text: KHB4D5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB4D5N60P/F
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Untitled
Abstract: No abstract text available
Text: ኹྯ High Voltage Transistors High Voltage Transistors ኹྯ FHTA92 DESCRIPTION & FEATURES 概述及特點 High Breakdown Voltage BVCEO=300V 擊穿電壓高（BVCEO=300V） SOT-23 PIN ASSIGNMENT 引腳說明 PIN NUMBER 引腳序號 SOT-23
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OT-23
FHTA92
OT-23
above25
-100Adc,
062in.
-10mAdc,
-10Vdc
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kf3n40
Abstract: KF3N40I KF3N40D fast reverse recovery time of LED
Text: SEMICONDUCTOR KF3N40D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and
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KF3N40D/I
KF3N40D
dI/dt200A/,
KF3N40
KF3N40I
KF3N40D
fast reverse recovery time of LED
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Untitled
Abstract: No abstract text available
Text: SMD • B 17-223/BHR7C-C30/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type. ․Pb-free. ․The product itself will remain within RoHS compliant version.
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17-223/BHR7C-C30/3C
16-Nov-2013.
DSE-0008837
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Untitled
Abstract: No abstract text available
Text: SMD 19-037A/RSGHBHW1-S03/2T Features Package in 8mm tape on 7〞diameter reel Compatible with automatic placement equipment Compatible with infrared and vapor phase reflow Solder process Full-color type Pb-free Component solderable surface finish is Gold
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9-037A/RSGHBHW1-S03/2T
DSE-0008740-v3
9-037A
DSE-0008740-v3
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O2W transistor
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB2D0N60P/F/F2
KHB2D0N60P
KHB2D0N60F
KHB2D0N60F2
KHB2D0N60F
O2W transistor
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KU3600N10D TECHNICAL DATA N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and
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KU3600N10D
Fig13.
Fig14.
Fig15.
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KF4N20
Abstract: KF4N20LD 3V02
Text: SEMICONDUCTOR KF4N20LD/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF4N20LD This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and
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KF4N20LD/I
KF4N20LD
Fig12.
Fig13.
Fig14.
Fig15.
KF4N20
KF4N20LD
3V02
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB3D0N70P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
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KHB3D0N70P/F
above25
dI/dt200A/,
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB4D5N60P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB4D5N60P1/F1
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Untitled
Abstract: No abstract text available
Text: SMD 1 Low Power LED 61-238/XK2C-SXXXXXXXXXX/ET Features ‧ P-LCC-6 package ‧ Top view LED ‧ Wide viewing angle:120° ‧ High Luminous intensity ‧ High Efficacy ‧ Pb-free ‧ RoHS-compliant ‧ ANSI Binning . Description ˙The Everlight 61-238 package has high efficacy, high CRI, low power consumption, wide viewing angle and a compact
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61-238/XK2C-SXXXXXXXXXX/ET
06-Apr
DSE-0003809
DSE-000
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JFET J105
Abstract: No abstract text available
Text: Tem ic Sillconix _ J105/106/107 N-Channel JFETs Product Summary P a rt N um ber v GS<off Y) rnscon) M ax ( ß ) J105 -4 .5 to - 1 0 3 10 14 J106 - 2 to - 6 6 10 14 J107 -0 .5 to -4 .5 8 10 14 toN iy p (ns) iD(off) ty P (PA) Features
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OCR Scan
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J105/106/107
P-37408--Rev.
JFET J105
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Untitled
Abstract: No abstract text available
Text: Generic Optoisoiator Specifications MCT2, MCT2E, MCT26 Optoisoiator GaAs Infrared Emitting Diode Phototransistor T h e MCT2, M CT2E a n d MCT26 are gallium arsen id e, in frared em itting dio d e coupled with a silicon phototransistor in a du al in-line package. T h e se devices are also available in
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MCT26
MCT26
above25SC
H11AG3
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QPB830W
Abstract: OPTEK slotted OPB830W OPB840W dual Phototransistor slotted LED IR SENSOR
Text: OPTEK Product Bulletin OPB830W January 2005 Slotted Optical Switches Types OPB83QW, OPB84QW Series Features • 0.125" 3.18 mm wide slot • Choice of aperture • Choice of opaque or IR transmissive shell material • Side mount configuration • 24", 26AWG wire leads
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OPB830W
QPB830W,
OPB84QW
26AWG
QPB830W
OPTEK slotted
OPB830W
OPB840W
dual Phototransistor slotted
LED IR SENSOR
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