AEROFLEX GAN POWER AMPLIFIER Search Results

AEROFLEX GAN POWER AMPLIFIER Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TC75S102F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
TPD4164F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4164K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
TPD4163F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31

AEROFLEX GAN POWER AMPLIFIER Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GaN amplifier Abstract: Aeroflex GaN power amplifier GaN Amplifier 18GHz PA020180-3922 rf power amplifier with s parameters Text: Broadband Standard Product PA020180-3922 GaN High Power Amplifier Module Broadband Power 2GHz to 18GHz 8Watts CW March 11, 2009 Preliminary www.aeroflex.com/bband DESCRIPTION FEATURES Our new industry leading broadband power amplifier designs provide performance without sacrificing output power. The ultra wideband performance	Original	PA020180-3922 18GHz 39dBm 16GHz 46dBm SCD10049 GaN amplifier Aeroflex GaN power amplifier GaN Amplifier 18GHz rf power amplifier with s parameters	PDF
SMA 65/125 Abstract: sub-d 50 pin sub-d 37 pin Aeroflex GaN power amplifier Text: Broadband Standard Product PA022023-38 GaN High Efficiency Power Amplifier 6 Watts from 2.2GHz to 2.3GHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA022023-38 is a Narrow band high efficiency power amplifier and is ideal for use as a stable IF Amplifier, wireless, point-to-point	Original	PA022023-38 38dBm SCD10034 SMA 65/125 sub-d 50 pin sub-d 37 pin Aeroflex GaN power amplifier	PDF
Aeroflex GaN power amplifier Abstract: tms 980 GaN amplifier PA001005-28 Text: Broadband Standard Product PA001005-28 GaN Medium Power Amplifier 100MHz to 500MHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA001005-28 is a power amplifier in a compact package and is ideal for use as a stable gain block, IF Amplifier or medium Power	Original	PA001005-28 100MHz 500MHz 500MHz 28dBm SCD10046 Aeroflex GaN power amplifier tms 980 GaN amplifier	PDF
GaN amplifier Abstract: Aeroflex GaN power amplifier PA001040-32 Text: Broadband Standard Product PA001040-32 GaN High Efficiency Driver Amplifier Broadband Power 100MHz to 4GHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA001040-32 is a broadband high efficiency driver amplifier in a compact package and is ideal for use as a stable gain block, IF	Original	PA001040-32 100MHz 32dBm SCD10045 GaN amplifier Aeroflex GaN power amplifier	PDF
CMPA0060002F Abstract: CMPA0060002F-TB CMPA2560002F Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F	PDF
Untitled Abstract: No abstract text available Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F	PDF
CMPA0060002F Abstract: cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier	PDF
TBT-06M20 Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12 Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F CMPA00 60002F TBT-06M20 SMF3-12 aeroflex SMF3-12	PDF
CMPA0060002F Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH Text: PRELIMINARY CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH	PDF
CMPA0060002F Abstract: CMPA0060002F-TB CMPA2560002F JESD22 Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F JESD22	PDF
westcode scr Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR Text: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes	Original	G15000CR MK100104 westcode scr toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR	PDF
Untitled Abstract: No abstract text available Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of	Original		PDF
EPC8004 Abstract: No abstract text available Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been	Original	AN015 EPC8000 ATS-54150K-C2-R0 EPC8004	PDF
Sony CXA1191M Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -\|5V in gnd in\|- 24 2 -\|5V in gnd in\|- 23 3 -\|5V in gnd in\|- 22	Original	0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide	PDF