TECDIA Search Results

TECDIA Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BMS100J2H		Tecdia	Capacitor: 10PF: 5%: SMD		Original	PDF
BMS100J2K		Tecdia	Capacitor: 10PF: 5%: SMD		Original	PDF
BMS100K2C		Tecdia	Capacitor: 10PF: 10%: SMD		Original	PDF
BMS100K2F		Tecdia	Capacitor: 10PF: 10%: SMD		Original	PDF
BMS100K2H		Tecdia	Capacitor: 10PF: 10%: SMD		Original	PDF
BMS100K2K		Tecdia	Capacitor: 10PF: 10%: SMD		Original	PDF
BMS100M2F		Tecdia	Capacitor: 10PF: 20%: SMD		Original	PDF
BMS100M2H		Tecdia	Capacitor: 10PF: 20%: SMD		Original	PDF

TECDIA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF
CC45T47K240G5C2 Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP Text: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB	Original	AMMC-5024 30KHz AMMC-5024 40GHz AV02-0704EN CC45T47K240G5C2 Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP	PDF
CMPA0060002F Abstract: CMPA0060002F-TB CMPA2560002F Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F	PDF
CMPA0060025F Abstract: CMPA0060025F-TB CMPA2560002F JESD22 Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F CMPA0060025F-TB CMPA2560002F JESD22	PDF
CMPA0060002F Abstract: cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier	PDF
TBT-06M20 Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12 Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F CMPA00 60002F TBT-06M20 SMF3-12 aeroflex SMF3-12	PDF
Untitled Abstract: No abstract text available Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F	PDF
DC bias of FET Abstract: Tecdia DC bias of gaas FET GaAs FETs bias tee fet rf high power Excelics packaging Text: Recommendations for the Handling, Mounting and Biasing of High Power GaAs FETs A. Handling Precautions: All GaAs FETs are sensitive to electrostatic discharge. It is Excelics policy that all GaAs FETs will be shipped in electrostatic protective packaging and the user must pay careful attention to the	Original		PDF
K2F transistor Abstract: Tecdia BMS150 Dielectrics BMS101 M2P diode K2F 9 K2t transistor 10X10 12X12 Text: TYPE-B CLASS2 Home > Products > Capacitors > B-type > B-Type High K Dielectrics Class 2 High K Dielectrics Class 2 Capacitance pF Part No. B C F K2C M2C K2C M2C K2C M2C K2C M2C K2C M2C K2C M2C K2F M2F K2F M2F K2F M2F K2F M2F Tolerance -Class- size Code (mils)	Original	10X10) 12X12) 16X16) 20X20) 24X24) 31X31) K2F transistor Tecdia BMS150 Dielectrics BMS101 M2P diode K2F 9 K2t transistor 10X10 12X12	PDF
Untitled Abstract: No abstract text available Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F	PDF
TBTH06M20 Abstract: CMPA0060025F Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F TBTH06M20	PDF
CMPA0060025F Abstract: RF-35-0100-CH CMPA0060025F-TB Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F RF-35-0100-CH CMPA0060025F-TB	PDF
CMS101K2KC Abstract: KGA4130D Tecdia transimpedance amplifier 5 GHz GTD-18408 Text: Preliminary Data Sheet December 1999 1KGA4130D 10Gbps AGC Transimpedance Amplifier IC DESCRIPTION Oki's 10 Gbps transimpedance amplifier is fabricated 0.1µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity and a wide dynamic range.	Original	KGA4130D 10Gbps 10pA/Hz 120nsec. KGA4130D GTD-18275 100pF CMS101K2KC Tecdia transimpedance amplifier 5 GHz GTD-18408	PDF
TBT-03M1 Abstract: CMPA0060005F Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F Text: PRELIMINARY CMPA0060005F 5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060005F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060005F CMPA0060005F TBT-03M1 Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F	PDF

CMPA0060002F Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH Text: PRELIMINARY CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH	PDF
CMPA0060002F Abstract: CMPA0060002F-TB CMPA2560002F JESD22 Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F JESD22	PDF
CC45T47K240G5-C2 Abstract: SA1515BX101M2HX5 CC45T47K240G5C2 SK04B102M11A6 AVX0402YG104ZAT2A MMA-005022 MicroMetrics 7V170 GRP155F51A474ZDO2B 00xF Text: MMA-005022 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012 Features: •       Frequency Range: 30KHz – 50 GHz P1dB: +22 dBm Vout: 7V p-p @50Ω Gain: 15.5 dB Vdd =7 V Ids = 200 mA Input and Output Fully Matched to 50 Ω Die size: 2350 x 1050 x 50 um	Original	MMA-005022 30KHz-50GHz 30KHz MMA-005022 30KHz 50GHz SA1515BX101M2HX5 AVX0402YG104ZAT2A SK04B102M11A6 GRP155F51A474ZDO2B CC45T47K240G5-C2 CC45T47K240G5C2 MicroMetrics 7V170 00xF	PDF