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    AFT18H35 Price and Stock

    NXP Semiconductors AFT18H357-24SR6

    RF MOSFET LDMOS 28V NI1230
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    DigiKey AFT18H357-24SR6 Reel
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    Newark AFT18H357-24SR6 Bulk 150
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    • 100 $65.64
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    Rochester Electronics AFT18H357-24SR6 150 1
    • 1 $78.34
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    • 100 $73.64
    • 1000 $66.59
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    NXP Semiconductors AFT18H356-24SR6

    RF MOSFET 28V NI1230
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    Verical AFT18H356-24SR6 203 1
    • 1 $136.17
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    Newark AFT18H356-24SR6 Bulk 150
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    Rochester Electronics AFT18H356-24SR6 25,798 1
    • 1 $197.54
    • 10 $197.54
    • 100 $185.69
    • 1000 $167.91
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    Rochester Electronics LLC AFT18H357-24NR6

    RF MOSFET LDMOS 28V OM1230-42
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    DigiKey AFT18H357-24NR6 Bulk 3
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    Flip Electronics AFT18H357-24NR6

    RF MOSFET LDMOS 28V OM1230-42
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    DigiKey AFT18H357-24NR6 Bulk 5
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    NXP Semiconductors AFT18H357-24NR6

    RF MOSFET LDMOS 28V OM1230-42
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    DigiKey AFT18H357-24NR6 Reel
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    Verical AFT18H357-24NR6 23 3
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    • 10 $178.4
    • 100 $167.7
    • 1000 $151.6375
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    Rochester Electronics AFT18H357-24NR6 23 1
    • 1 $142.72
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    • 100 $134.16
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    Flip Electronics AFT18H357-24NR6 2,550
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    AFT18H35 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFT18H357-24NR6 NXP USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC TRANS RF LDMOS Original PDF
    AFT18H357-24SR6 NXP USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 1.81GHZ NI1230-4 Original PDF

    AFT18H35 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor j307

    Abstract: j352 sk063
    Text: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to


    Original     		AFT18H357--24S AFT18H357-24SR6 transistor j307 j352 sk063 PDF

    TRANSISTOR J477

    Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17 PDF

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF