Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AGR09180E Search Results

    SF Impression Pixel

    AGR09180E Price and Stock

    Advanced Semiconductor Inc AGR09180EF

    RF MOSFET Transistors 865-895MHz 38Watt Gain 18.25dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR09180EF
    • 1 -
    • 10 $90.38
    • 100 $86.65
    • 1000 $86.65
    • 10000 $86.65
    		Get Quote

    AGR09180E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR09180E TriQuint Semiconductor 180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09180EF Agere Systems FET, 180W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09180EF TriQuint Semiconductor 180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09180EU Agere Systems FET, 180W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR09180E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AGR09180EF

    Abstract: JESD22-C101A
    Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A PDF

    AGR09180EF

    Abstract: JESD22-C101A transistor z14 L
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L PDF

    C40 Sprague

    Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09180E Hz--895 AGR09180E DS04-031RFPP DS02-342RFPP) C40 Sprague C201A Z25 transistor UT-141A AGR09180EF AGR09180EU JESD22-C101A PDF

    z24 mosfet

    Abstract: No abstract text available
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet PDF

    c5047

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09180E Hz--895 DS02-342RFPP c5047 PDF

    c5047

    Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW
    Text: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09180EF Hz--895 AGR09180EF DS04-155RFPP DS04-123RFPP) c5047 JESD22-C101A 100B3R9BW 100B4R7 100B4R7BW PDF

    AGR09180E

    Abstract: AGR09180EF AGR09180EU JESD22-A114
    Text: Preliminary Product Brief April 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09180E Hz--895 AGR09180E PB03-082RFPP PB03-082RFPP) AGR09180EF AGR09180EU JESD22-A114 PDF

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 PDF

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM PDF