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Advanced Semiconductor Inc AGR26125EF RF MOSFET Transistors 2.5-2.7GHz 20Watt Gain 11.5dB
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Mouser Electronics	AGR26125EF					1 - 10 $91.81 100 $87.98 1000 $87.98 10000 $87.98	Get Quote

AGR26125EF Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR26125EF		Agere Systems	125 W, 2.535 GHz - 2.655 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR26125EF		TriQuint Semiconductor	125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR26125EF-DB		Agere Systems	MOSFET		Original	PDF

AGR26125EF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
F1 J37 Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz Text: Preliminary Data Sheet August 2004 AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	PDF	AGR26125E AGR26125E AGR26125EF AGR26125EU DS04-111RFPP F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
Untitled Abstract: No abstract text available Text: Preliminary Product Brief December 2003 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	PDF	AGR26125E AGR26125EU AGR26125EF AGR261g PB03-192RFPP
c7a series vishay capacitor Abstract: F1 J37 C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	PDF	AGR26125E AGR26125E AGR26125EU AGR26125EF c7a series vishay capacitor F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR
AGR26125E Abstract: AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A Text: Preliminary Product Brief April 2004 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	PDF	AGR26125E AGR26125E AGR26125EU AGR26125EF PB04-081RFPP PB03-192RFPP) AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
F1 J37 Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	PDF	AGR26125E AGR26125E AGR26125EU AGR26125EF F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz