AGRB10XM Search Results

AGRB10XM Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGRB10XM		Agere Systems	10 W, 1.0GHz TO 2.7 GHz N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGRB10XM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AGRB10XM Abstract: JESD22-C101A DSA00206784.txt Text: Data Sheet April 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.	Original	PDF	AGRB10XM AGRB10 DS04-140RFPP PB04-052RFPP) AGRB10XM JESD22-C101A DSA00206784.txt
Untitled Abstract: No abstract text available Text: Product Brief February 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	PDF	AGRB10XM PB04-052RFPP PB04-009RFPP)
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet July 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.	Original	PDF	AGRB10XM AGRB10 DS04-203RFPP DS04-140RFPP)
Untitled Abstract: No abstract text available Text: Product Brief January 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	PDF	AGRB10XM PB04-009RFPP