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    Omega Engineering PX709LGW-100AI-HH-150FT

    0 TO 100 PSI, , 0.08% ACCURACY, 4 TO 20 MA,150FT SUBMERSIBLE CABLE, WITH LIGHTNING/SURGE PROTECTION - Bulk (Alt: PX709LGW-100AI-HH-)
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    Omega Engineering PX709GW-150AI-HH

    Grnd Wtr 150Psia Ma 0.08 |Omega PX709GW-150AI-HH
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    Newark PX709GW-150AI-HH Bulk 1
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    Omega Engineering PX709GW-750AI-HH

    Grnd Wtr 750Psia Ma 0.08 |Omega PX709GW-750AI-HH
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    Newark PX709GW-750AI-HH Bulk 1
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    Omega Engineering PX709GW-100AI-HH

    Grnd Wtr 100Psia Ma 0.08 |Omega PX709GW-100AI-HH
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    Newark PX709GW-100AI-HH Bulk 1
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    Omega Engineering PX709GW-015AI-HH

    Grnd Wtr 15Psia Ma 0.08 |Omega PX709GW-015AI-HH
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    Newark PX709GW-015AI-HH Bulk 1
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    AIHH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CS4215 Semiconductor Corporation 16-Bit, 48 kHz, Multimedia Audio Codec Description Features Sample 48kH z Rates Ranging From 4kH z to 16-bit Linear, 8-bit n-law or A-law Coding >80 dB Signal-to-Noise Ratio Programm able Gain For Analog Inputs Programm able Attenuation for Analog


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    PDF CS4215 16-Bit, 16-bit CS4215 DS76PP5

    K555KN

    Abstract: scans-048 DSAGER00026 YAAP
    Text: C JX E /I A H O B C C C P M M KPO CXEM A K555KI113 LSl°S8 1. OömHe cBeAeHMíi M HTerpajibHan MHKpocxeMa K.555K.ni3 — qeTbipe AByxBXOAOBhix My/ibTHn^HKcepa c 3anoMHH3HHeM. D K/ik m 21,5m ax ^ M acca He 6o^ee 1,2 g . 1 <t>ytiKUH0HajibH0e T a ô JiH u a o 6o 3Ha»ieHHe


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    PDF K555KI113 K555KN scans-048 DSAGER00026 YAAP

    BBREF0425

    Abstract: No abstract text available
    Text: 5 1993 B U R R -B R O W N REF1004 ♦ Micropower VOLTAGE REFERENCE DESCRIPTION FEATURES The REF1004 Micropower Voltage References are two terminal bandgap reference diodes designed to provide high accuracy and excellent temperature characteristics at very low operating currents. Optimization of the key


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    PDF REF1004 REF1004 LT1004 LM185 100pF BBREF0425

    Untitled

    Abstract: No abstract text available
    Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC. SCHEMATIC ELECTRICAL CHARACTERISTICS TURNS RATID g 25°C 1CT : 1CT ±27.


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    PDF 2002/95/EC. 350ju 100MHz 2MHz-30MHz 60MHz-80MHz

    Untitled

    Abstract: No abstract text available
    Text: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION


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    PDF SDP8405 SEP8505 SEP8705 SDP8405 020SQ SEP8505 00E2545

    Untitled

    Abstract: No abstract text available
    Text: 2 mm REVISION AX DO NOT SCALE FROM THIS PRINT ONE PLACE OECMAL& ± .1 TWO PLACE DECMAL& ± .01 NOTES: 1. RETENTION FORCE IN BODY TO BE: 1 lbs. MIN S M M — 1X X - X X - X X 2. INSERTION FORCE TO BE: 3.0 oz. MAX. 3. WITHDRAWAL FORCE TO BE: 0.4 oz. MIN. NOOF


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    PDF PPP-09

    Untitled

    Abstract: No abstract text available
    Text: THE INFDRMATIDN CONTAINED HEREIN IS CONSIDERED 'PR O PR IE T A R Y' TD B E L FUSE INC, AND SH ALL NDT BE CDPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN A PPR O VAL OF B E L FUSE INC. RoHS 2002/95/EC SCHEMATIC ELECTRICAL CHARACTERISTICS g 25»C TURNS RATIO


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    PDF 2002/95/EC 350juH 65MHz 65MHz 100MHz 100MHz 125MHz 5MHz-40MHz 40MHz-100MHz 100kHz

    dht11

    Abstract: DHT-11 aihh
    Text: BA3430S/ BA3430F/ BA3430FS BA3430S/BA3430F B A 3430FS BA3430S, BA3430F, B A 3430FSli, x u * 7 “u 7 > y - t '- r , mm z n tz - ? ' 7 > ffiUfW fcffiSBft m r t P n > h □ —ji^a i/ 'y ? y m s S S B -a -i:, -y ~7it v -f ¿ « 6 . x — 7 “^ ' y < * f ig r - 5 c


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    PDF BA3430S/ BA3430F/ BA3430FS BA3430S/BA3430F 3430FS BA3430S, BA3430F, 3430FSli, BA3230S, dht11 DHT-11 aihh