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    Abstract: No abstract text available
    Text: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


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    PDF AO4706 AO4706/L AO4706 AO4706L -AO4706L

    AO4706

    Abstract: 24v 5a smps dt1000
    Text: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original
    PDF AO4706 AO4706/L AO4706 AO4706L -AO4706L 24v 5a smps dt1000