Untitled
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOL1412
AOL1412
AOL1412L
Figure15:
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AOL1412L
Abstract: AOL1412
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side
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AOL1412
AOL1412/L
AOL1412
AOL1412L
-AOL1412L
00A/us
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Untitled
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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Original
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AOL1412
AOL1412
AOL1412L
00A/us
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PDF
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AOL1412L
Abstract: SMPS 24V AOL1412 24v 5a smps
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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Original
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AOL1412
AOL1412
AOL1412L
00A/us
SMPS 24V
24v 5a smps
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