L0812
Abstract: 9A110-10
Text: * p to s AP9A110 •SEMICONDUCTOR 128K x 8 High Output Drive, High-Speed CMOS Static RAM with 2V Data Retention Features • • • • • • • • • • high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit
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AP9A110
V/250
32-Pin
28-Pin
300-Mil)
32-Pin
400-Mil)
44-Pin
L0812
9A110-10
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812AD
Abstract: V321
Text: Creation Date: August 4, 1998 Revision Date: October 7, 1998 K p to s _ I e m i c o n d u c t o r AP9A110/AP9A110L PRELIMINARY 5V, 128K x 8 High Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.
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