InGaAs apd photodiode
Abstract: InGaAs apd photodiode application note avalanche photodiode submarine
Text: WZ700020B 1/6 MITSUBISHI (OPTICAL DEVICES) FU-318SAP-x2Mx APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FU-318SAP-x2Mx series avalanche photodiode(APD) modules are designed for use in high-speed,long haul optical communication systems fiber testing equipment.
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WZ700020B
FU-318SAP-x2Mx
FU-318SAP-x2Mx
1550nm)
InGaAs apd photodiode
InGaAs apd photodiode application note
avalanche photodiode submarine
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avalanche photodiode submarine
Abstract: FU-318AP-VM6 InGaAs apd photodiode FU-318SAP-VM6 mitsubishi fu mmf
Text: WZ700066B 1/3 MITSUBISHI (OPTICAL DEVICES) FU-318AP/SAP-VM6 APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION The FU-318AP-VM6/318SAP-VM6 series avalanche photodiode(APD) modules are designed for use in fiber testing equipment and high-speed, long haul optical
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WZ700066B
FU-318AP/SAP-VM6
FU-318AP-VM6/318SAP-VM6
1300nm)
avalanche photodiode submarine
FU-318AP-VM6
InGaAs apd photodiode
FU-318SAP-VM6
mitsubishi fu mmf
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Untitled
Abstract: No abstract text available
Text: InGaAs APD Photo Diode Modules 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified • InGas APD Photodiode • Low Dark Current • High Speed 2GHz • 800nm to 1700nm Response • Miniature Package
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800nm
1700nm
3080-50R
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InGaAs apd photodiode
Abstract: FU-318SAP series photodiode Avalanche photodiode mitsubishi APD Photodiode apd FU-318AP-M6 FU-318SAP-M6 avalanche photodiode ingaas ghz
Text: MITSUBISHI OPTICAL DEVICES FU-318AP-M6/FU-318SAP-M6 InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION Th e FU-318AP-M6 /318SAP-M6 series avalanche photodiode(APD) modules are designed for use in fib er testing equipment and high-speed, long haul optical communication systems.
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FU-318AP-M6/FU-318SAP-M6
FU-318AP-M6
/318SAP-M6
1300nm)
FU-318SAP-M6
InGaAs apd photodiode
FU-318SAP series
photodiode Avalanche photodiode
mitsubishi APD
Photodiode apd
FU-318SAP-M6
avalanche photodiode ingaas ghz
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Untitled
Abstract: No abstract text available
Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain
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D-82211
KAPD0001E05
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Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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G8931-20
Abstract: low dark current APD SE-171 G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E03
low dark current APD
G893
hamamatsu low dark current APD
KAPDB0120EA
hamamatsu ingaas APD
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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G8931-20
Abstract: LH0032 SE-171 low dark current APD APD OTDR
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E02
LH0032
low dark current APD
APD OTDR
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APD OTDR
Abstract: APD photodiode 8 Ghz G893 G8931-20 InGaAs apd photodiode APD 2 Ghz 150 nA KAPDC0005JC
Text: PHOTODIODE InGaAs APD G8931-20 大受光面サイズ: φ0.2 mm高速応答: 0.9 GHz 距離計測、空間光伝送、微弱光検出などに用いられる大面積InGaAs APDです。大受光面サイズφ0.2 mmで、0.9 GHz Typ. M=10 の高速応答を実現しています。
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G8931-20
KAPDB0122JA
KAPDA0034JA
KAPDC0005JC
435-85581126-1TEL
434-3311FAX
KAPD1019J03
APD OTDR
APD photodiode 8 Ghz
G893
G8931-20
InGaAs apd photodiode
APD 2 Ghz 150 nA
KAPDC0005JC
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InGaAs apd photodiode
Abstract: MAR 609 InGaas PIN photodiode, 1550 NEP InGaAs APD photodiode 1550 Tomography VBD1 photodiode 1550 NEP photodiode InGaAs NEP backside illuminated ingaas photodiode LIDAR
Text: SU200-01A-TO SU200-01A-SM Large Area InGaAs APDs The largest commercially available InGaAs APD, the SU200-01A is ideal for 1.25 Gbps free space optical communications laser range-finding applications, OTDR and high resolution Optical Coherence Tomography.
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SU200-01A-TO
SU200-01A-SM
SU200-01A
03-Mar-05
InGaAs apd photodiode
MAR 609
InGaas PIN photodiode, 1550 NEP
InGaAs APD photodiode 1550
Tomography
VBD1
photodiode 1550 NEP
photodiode InGaAs NEP
backside illuminated ingaas photodiode
LIDAR
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S12926
Abstract: S12926-05
Text: セレクションガイド 2015.1 Si APD アバランシェ・フォトダイオード 内 部 増 倍 機 能 を もった 高 速・高 感 度 の フォト ダ イ オ ード Si AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (アバランシェ・フォトダイオード)
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NR8300FP-CC-AZ
Abstract: NR8300FP-CC
Text: NEC's φ30 µm InGaAs APD IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATION AND OTDR APPLICATIONS NR8300FP-CC FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 5 nA NEC'S NR8300FP-CC is an InGaAs avalanche photo diode module with single mode fiber. It is designed for optical test
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NR8300FP-CC
NR8300FP-CC
SM-9/125)
NR8300FP-CC-AZ
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NR8300FP-CC
Abstract: No abstract text available
Text: NEC's φ30 µm InGaAs APD IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATION AND OTDR APPLICATIONS NR8300FP-CC FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 5 nA NEC'S NR8300FP-CC is an InGaAs avalanche photo diode module with single mode fiber. It is designed for optical test
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NR8300FP-CC
NR8300FP-CC
SM-9/125)
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IAE080X
Abstract: InGaas PIN photodiode, 1550 sensitivity IAE200X iae200 rangefinding InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 ,sensitivity InGaAs photodiode spectral response TO46 photodiode free space communication
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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InGaas PIN photodiode, 1550 nec
Abstract: APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm NR8360JP-BC InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application
Text: PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm NEC's NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is
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NR8360JP-BC
NR8360JP-BC
14-PIN
InGaas PIN photodiode, 1550 nec
APD 1550 nm
APD for fiber test
InGaAs apd photodiode
InGaas APD photodiode, 1550 sensitivity
apd 1550 OTDR
pin Photodiode 1550 nm
InGaAs photodiode 1310 1550
InGaas PIN photodiode, 1550 sensitivity application
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inGaAs photodiode 1550
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE 200 avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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Untitled
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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InGaas PIN photodiode, 1550 NEP
Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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Untitled
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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IAG 080
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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Untitled
Abstract: No abstract text available
Text: Large Area InGaAs APD Module 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified • Low Noise • High Sensitivity • 200um Active Area • Standard TO46 Package • RoHS Compliant
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200um
1550-200R
1550-200R
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI OPTICAL DEVICES FU-318AP-M6/FU-318SAP-M6 InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION The FU-318AP-M6/318SAP-M6 series avalanche photodiode(APD) modules are designed for use in fiber testing equipment and high-speed, long haul optical communication systems.
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FU-318AP-M6/FU-318SAP-M6
FU-318AP-M6/318SAP-M6
1300nm)
FU-318AP-M6
FU-318SAP-M8
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mitsubishi APD
Abstract: Photodiode apd "InGaAs APD" InGaAs Photodiode 1550nm apd 2.5 g 1550nm apd 1300nm
Text: • G01Û35T GT b ■ MITSUBISHI OPTICAL DEVICES FU-318AP/FU-318SAP InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FEATURES The FU-318AP/318SAP series avalanche photodiode • Low-dark current (3nA) (APD) modules are designed fo r use in fibe r testing
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FU-318AP/FU-318SAP
FU-318AP/318SAP
1300nm)
FU-318SAP
FU-318AP
00l03t
mitsubishi APD
Photodiode apd
"InGaAs APD"
InGaAs Photodiode 1550nm
apd 2.5 g 1550nm
apd 1300nm
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