APD OTDR
Abstract: APD photodiode 8 Ghz G893 G8931-20 InGaAs apd photodiode APD 2 Ghz 150 nA KAPDC0005JC
Text: PHOTODIODE InGaAs APD G8931-20 大受光面サイズ: φ0.2 mm高速応答: 0.9 GHz 距離計測、空間光伝送、微弱光検出などに用いられる大面積InGaAs APDです。大受光面サイズφ0.2 mmで、0.9 GHz Typ. M=10 の高速応答を実現しています。
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G8931-20
KAPDB0122JA
KAPDA0034JA
KAPDC0005JC
435-85581126-1TEL
434-3311FAX
KAPD1019J03
APD OTDR
APD photodiode 8 Ghz
G893
G8931-20
InGaAs apd photodiode
APD 2 Ghz 150 nA
KAPDC0005JC
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G8931-20
Abstract: low dark current APD SE-171 G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E03
low dark current APD
G893
hamamatsu low dark current APD
KAPDB0120EA
hamamatsu ingaas APD
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G8931-03
Abstract: SE-171
Text: PHOTODIODE InGaAs APD G8931-03 High-speed response: 2.5 Gbps, active area: φ0.03 mm Features Applications l 2.5 Gbps operation l Low capacitance l Optical fiber communications • General rating Parameter Active area Symbol - Value φ0.03 Unit mm Symbol IF
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G8931-03
SE-171
KAPD1011E01
G8931-03
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LH0032
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E01
LH0032
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Untitled
Abstract: No abstract text available
Text: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current
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G8931-03
SE-171
KAPD1011E02
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G8930
Abstract: No abstract text available
Text: 2002. 3/7, KR1-I50008 Pigtail type InGaAs APD with preamp G8930 series FEATURES z High speed response:2.5Gbps z Typical sensitivity:-31dBm z Typical overload:-5dBm ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Reverse Voltage APD Operating Temperature
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KR1-I50008
G8930
-31dBm
25deg
-27dBm
-27dBm
G8930-1x
G8930-3x
G8930-2x
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G8931-04
Abstract: LH0032 SE-171 OPTICAL NETWORK TERMINAL InGaAs apd photodiode
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E02
LH0032
OPTICAL NETWORK TERMINAL
InGaAs apd photodiode
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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LH0032
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E01
LH0032
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PDF
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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PDF
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G8931-20
Abstract: LH0032 SE-171 low dark current APD APD OTDR
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E02
LH0032
low dark current APD
APD OTDR
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PDF
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Untitled
Abstract: No abstract text available
Text: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current
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G8931-03
SE-171
KAPD1011E03
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G8931-04
Abstract: InGaAs apd photodiode
Text: PHOTODIODE InGaAs APD G8931-04 SONETG/GE-PONに対応した応答特性 SONET、G/GE-PONなどの幹線系光ファイバ通信に必要な2.5 Gbpsの高速応答を実現しています。 特長 用途 l 高速応答: 2.5 Gbps l 低暗電流 l 低容量
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G8931-04
KAPDB0124JA
KAPDA0034JA
KAPDC0005JC
435-85581126-1TEL
434-3311FAX
KAPD1018J03
G8931-04
InGaAs apd photodiode
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InGaAs apd photodiode
Abstract: G8931-04 Ge APD SE-171 KAPDC0005EC 1NA100 low dark current APD hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET synchronous optical network , G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network).
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G8931-04
G8931-04
SE-171
KAPD1018E03
InGaAs apd photodiode
Ge APD
KAPDC0005EC
1NA100
low dark current APD
hamamatsu ingaas APD
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D175
Abstract: B535 k 016 c945 p 2B51 91AB A13A C929 BD 761
Text: 86.-6 @B2;9<91AB?5 >=D5? ?5:1E 6JGTURJS R R R R R R R R R t9<5 {?`lsceefjc t9<5 {?`lfbbdbbfe 3=<A13A 41A1 3=9: q?>D13D 1BB1>75=5>D co^ cq cbb= \1D co h-rq] u?<4 @<1D54l eb= \1D co h-rq] q?>D13D B5C9CD1>35 q?>D13D =1D5B91< ho dgb-oqaeb-rq z1H` CG9D389>7 F?<D175
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1D54l
\G94D8
\25DG55>
D13DC]
35a3B55
49CD1
697EB1D9?
1D5B91<
D175
B535
k 016 c945 p
2B51
91AB
A13A
C929
BD 761
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Untitled
Abstract: No abstract text available
Text: 化合物光半導体 受光素子 1 InGaAs/GaAs PINフォトダイオード 1-1 1-2 特性 使い方 2 InGaAs APD 2-1 2-2 2-3 動作原理 特性 使い方 第 章 6 8 MCT HgCdTe 光起電力素子 8-1 8-2 特性 使い方 9 複合素子 10 オプション
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yd4a
Abstract: D859B D175 ED-95 D-175 41D1 B5D5
Text: 86:5 1CB><>B9D5 @5;1F 6KHUVSKT U eco CG9D389>7 31@129<9DI D? kh U o=295>D D5=@am `gc U d t?B= o \ d t?B= q 3?>D13D 1BB1>75=5>D U .1C8 D978D 1>4 t<EH @B?654 DI@5C 1F19<12<5 U ~?v* \ sy- 3?=@<91>D BXRMIHN 1RRNMIHUMQPT w>4931D?B <1=@ 3?>DB?<_ }?G5B4?B \ G9>4?GC_ .9@5B 3?>DB?<
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CG9D389
D978D
4931D
9AB93A
53DB931<
39B3E9Da
51CEB54
CE445
4931D9
41D1C855D
yd4a
D859B
D175
ED-95
D-175
41D1
B5D5
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UX G5B
Abstract: D859B C929 DI 761 D13d u6 ed 91AB A13A D175 u6 ej
Text: 86./6 [v}/^dhr\ ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR S dam CG9D389>7 31@129<9DI S ham G9D8CD1>4C 9>BEC8 3EBB5>D S +-^bf [1D bca-mo\ 1F19<12<5 r9<5 z?_kqbdefbh S b r?B= m 3?>697EB1D9?> S q>F9B?>=5>D1< 6B95>4<I @B?4E3D [~?t* 3?=@<91>D\ S {ED<9>5 p9=5>C9?>Ck [df_c H dc_c H ce_a\ =
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CG9D389
697EB1D9?
1D5B91<
41D1C855D
B565B5
5396931D9?
931D9?
UX G5B
D859B
C929
DI 761
D13d
u6 ed
91AB
A13A
D175
u6 ej
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C945B
Abstract: D85b FAJ 38 D175 X-D4A 1f94 12F5
Text: 754,- :8;80@A>4 7867 =<C4> 90@278;6 >490D 5HESTQHR U o33?B49>7 D? wsq iechh`fdm,qf U *DB?>7 B5C9CD1>35 129<9DI D? C8?BD 39B3E9D 3EBB5>D 1D ficco \fc D9=5C =?B5 D81> B1D54 <?14 3EBB5>D] U deco CG9D389>7 31@129<9DI U v51FI <?14 E@ D? ffaeg;-o U g;- 495<53DB93 CDB5>7D8
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39B3E9D
B1D54
CG9D389
v51FI
53DB93
\25DG55>
D13DC]
1D389
1D5B91<
C945B
D85b
FAJ 38
D175
X-D4A
1f94
12F5
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Infrared detectors
Abstract: dark detector application ,uses and working
Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use
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C945B
Abstract: FG 99 D175
Text: 643- 97:7/?@=3 6756 <;B3= 8/?167:5 =38/C 4HDSTQHR T dcco CG9D389>7 31@129<9DI T *DB?>7 B5C9CD1>35 129<9DI D? C8?3; [ F92B1D9?> T v51FI <?14 E@ D? ejjcc-o T g;- 495<53DB93 CDB5>7D8 \25DG55> 3?9< 1>4 3?>D13DC] T y93B? CG9D38 ?> =?E>D9>7 2?1B4 1F19<12<5 T s>F9B?>=5>D1< 6B95>4<I @B?4E3D \~?v* 3?=@<91>D]
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CG9D389
F92B1D9?
v51FI
53DB93
\25DG55>
D13DC]
CG9D38
1D389
1D5B91<
C945B
FG 99
D175
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Selection guide
Abstract: No abstract text available
Text: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high
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KIRD0005E02
Selection guide
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Untitled
Abstract: No abstract text available
Text: セレクションガイド 2015.6 InGaAs フォトダイオード 低 ノイ ズ で 優 れ た 周 波 数 特 性 の 近 赤 外 線 検 出 素 子 InGaAs PHOTODIODE 当社独自の化合物半導体プロセス技術を生かしたInGaAsフォトダイオードは
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C945B
Abstract: D175 A984
Text: 754,- :8;80@A>4 7867 =<C4> 90@278;6 >490D 5HESTQHR U o33?B49>7 D? wsq iechh`fdm,qf U *DB?>7 B5C9CD1>35 129<9DI D? C8?BD 39B3E9D 3EBB5>D 1D ficco \fc D9=5C =?B5 D81> B1D54 <?14 3EBB5>D] U deco CG9D389>7 31@129<9DI U v51FI <?14 E@ D? ffaeg;-o U g;- 495<53DB93 CDB5>7D8
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39B3E9D
B1D54
CG9D389
v51FI
53DB93
\25DG55>
D13DC]
1D389
1D5B91<
C945B
D175
A984
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