APM4008N
Abstract: APM4008NG APM4008 mosfet 10V 10A A102 STD-020C
Text: APM4008NG N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V RDS(ON)=10.5mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged G Lead Free Available (RoHS Compliant) S Top View of TO-263
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Original
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APM4008NG
0V/60A,
O-263
APM4008N
APM4008N
APM4008NG
APM4008
mosfet 10V 10A
A102
STD-020C
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PDF
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APM4008N
Abstract: APM4008NG APM4008 ANPEC A102 A104 A108 B102 JESD-22
Text: APM4008NG N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=10mΩ (typ.) @ VGS=4.5V • • • D S Super High Dense Cell Design Reliable and Rugged Top View of TO-263 Lead Free and Green Devices Available (RoHS
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Original
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APM4008NG
0V/60A,
O-263
APM4008N
APM4008N
JESD-22,
APM4008NG
APM4008
ANPEC
A102
A104
A108
B102
JESD-22
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PDF
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APM4008N
Abstract: APM4008 APM4008NG A102
Text: APM4008NG N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V RDS(ON)=10mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged G Lead Free and Green Devices Available (RoHS
|
Original
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APM4008NG
0V/60A,
O-263
APM4008N
APM4008N
APM4008
APM4008NG
A102
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PDF
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