3SA15
Abstract: No abstract text available
Text: molate 256K X 1 SRAM MSM1256T/V-25/35 Semiconductor Issue 1.2 : April1991 ADVANCE PRODUCT INFORMATION 262,144 x 1 BiCMOS High Speed Static RAM Features Pin Definitions Very Fast Access Times of 25/35 ns Standard 24 pin Dual-in-Line Package Low Power Standby - 50 mW
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MSM1256T/V-25/35
MIL-STD-883C
April1991
GND12
A0-A17
3SA15
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ATT91C010
Abstract: atT91C010-30 ATT91 1641MHz
Text: SEP i 1991 I AT&T Advance Data Sheet ATT91C010 Low-Power REACH1 Device Features Fully-integrated single-chip read channel 5 V only all CMOS design Low-power operation: 225 mW max read mode/255 mW max write mode Standby mode power = 25 mW Data rates up to 30 Mbit/s
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ATT91C010
mode/255
44-pin
lowpower98
April1991
DS90-175CMOS
atT91C010-30
ATT91
1641MHz
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2F4002
Abstract: ic 2017
Text: PUMA 2F4002 m o l a PUMA 2F4002-90/12/15/20 t e Issue 1.1 : Aprii 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 4,194,304 bit CMOS FLASH Memory Module 1 o o o o o o o o o o o 11 Features FLASH Eraseable Non-Volatile Memory Module.
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2F4002
2F4002-90/12/15/20
MIL-STD-883C.
A0-A16--------
2F4002MB-12
MIL-STD-883C
2F4002
ic 2017
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