ASI10527 Search Results

ASI10527 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ASI10527		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR		Original	PDF

ASI10527 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ASI10527 Abstract: ASI2001 Text: ASI2001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2001 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min. at 1.0 W/ 2,000 MHz	Original	ASI2001 ASI10527 ASI10527 ASI2001	PDF
ASI2001 Abstract: ASI10527 Text: ASI2001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2001 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min. at 1.0 W/ 2,000 MHz	Original	ASI2001 ASI2001 ASI10527	PDF

Catalog Datasheet

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ASI10527

Abstract: ASI2001
Text: ASI2001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2001 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min. at 1.0 W/ 2,000 MHz

Original

ASI2001 ASI10527 ASI10527 ASI2001

PDF

ASI2001

Abstract: ASI10527
Text: ASI2001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2001 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min. at 1.0 W/ 2,000 MHz