ATC100B102JT500XT Search Results

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Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with	Original	MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1	PDF
Nippon capacitors Abstract: MRF6S19120H Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S19120H IS--95 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100H	PDF
MRF5P21180HR6 Abstract: MRF5P21180 AN1955 CDR33BX104AKYS Text: Freescale Semiconductor Technical Data Document Number: MRF5P21180HR6 Rev. 3, 10/2008 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF5P21180HR6 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P21180HR6 MRF5P21180HR6 MRF5P21180 AN1955 CDR33BX104AKYS	PDF
MRF6VP3450H Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450H MRF6VP3450H 470-860 DVB-T Schematic MRF6Vp3450 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT	PDF
MRF6Vp3450 Abstract: MRF6VP3450HR5 atc800b4r7j500xt ATC800B MRF6VP3450H UUD1V220MCL1GS A114 JESD22 MRF6VP3450HR6 MRF6VP3450HSR5 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 3, 7/2009 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6Vp3450 atc800b4r7j500xt ATC800B MRF6VP3450H UUD1V220MCL1GS A114 JESD22 MRF6VP3450HSR5	PDF
DVB-T Schematic Abstract: MRF6VP3450HR6 atc100B120GT500XT atc100B100GT500XT MRF6Vp3450 ATC800B class B push pull power amplifier dvb-t transmitters MRF6VP3450H UUD1V220MCL1GS Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2.1, 11/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 DVB-T Schematic atc100B120GT500XT atc100B100GT500XT MRF6Vp3450 ATC800B class B push pull power amplifier dvb-t transmitters MRF6VP3450H UUD1V220MCL1GS	PDF
atc100b102jt500xt Abstract: CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 atc100b102jt500xt CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955	PDF
MRF6S21100H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 MRF6S21100H	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 1, 2/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in	Original	MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 0, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in	Original	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1	PDF
mrf5s21090 Abstract: Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 RF Power Field Effect Transistors MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090H mrf5s21090 Nippon capacitors	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6	PDF
MRF19085 Abstract: CRCW12062200FKEA AN1955 CRCW120610R0FKEA GX-0300-55-22 MRF19085LR3 7525p Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF19085LR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19085LR3 MRF19085-2 MRF19085 CRCW12062200FKEA AN1955 CRCW120610R0FKEA GX-0300-55-22 MRF19085LR3 7525p	PDF

AN1955 Abstract: ATC100B2R0BT500XT ATC100B9R1CT500XT MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 D2426 Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090HR3 AN1955 ATC100B2R0BT500XT ATC100B9R1CT500XT MRF5S21090H MRF5S21090HSR3 mrf5s21090 D2426 Nippon capacitors	PDF
MRF6S19120H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 MRF6S19120HR3 MRF6S19120HSR3 Designed for N - CDMA base station applications with frequencies from 1930	Original	MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 MRF6S19120HR3 MRF6S19120H	PDF
MRF6VP3450H Abstract: ATC800B DVB-T Schematic MRF6Vp3450 A114 JESD22 MRF6VP3450HR5 MRF6VP3450HR6 MRF6VP3450HSR5 MRF6VP3450HSR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2, 9/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450H ATC800B DVB-T Schematic MRF6Vp3450 A114 JESD22 MRF6VP3450HSR5	PDF
GX-0300-55-22 Abstract: MRF19085 CRCW12062200FKEA T491D226K035AT rf power amplifier 850 MHZ AN1955 CRCW120610R0FKEA MRF19085LSR3 7525p Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF19085LSR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19085LSR3 MRF19085-1 GX-0300-55-22 MRF19085 CRCW12062200FKEA T491D226K035AT rf power amplifier 850 MHZ AN1955 CRCW120610R0FKEA MRF19085LSR3 7525p	PDF