transistor SMD P2F
Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website
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FPD4000AF
FPD4000AF
ATC600S330JW250
T491B105M035AS7015
RCI-0603-10R1J
PC-SP-000022-002
AMP-103185-2
transistor SMD P2F
PHEMT marking code a
pHEMT transistor 360
transistor STD P2F
smd p2f transistor
MIL-HDBK-263
transistor P2F
ATC600S1R0
FET MARKING CODE
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TO272
Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to
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MWIC930/D
MWIC930R1
MWIC930GR1
MWIC930
MWIC930R1
TO272
RM73B2BT
A113
GRM42
MWIC930GR1
2XE3
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GRM39COG221J050AD
Abstract: A17014 MMA707 MMA707-3030 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A
Text: MMA707 1 Watt InGaP HBT Amplifier FEATURES MMA707 • High Output Power: +31 dBm Typ -3030 • High 3rd Order IP: +50 dBm (Typ) • High Dynamic Range: 97 dB (Typ) 3mm x 3mm square • 3mm square QFN plastic package DESCRIPTION The MMA707-3030 is a Power InGaP HBT device that is designed to provide moderate power
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MMA707
MMA707-3030
A17014
GRM39COG221J050AD
A17014
MMA707
ATC600S1R8AT250
A55085
Rogers RO4003
grm39
RO40
GRM39COG221J050A
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Untitled
Abstract: No abstract text available
Text: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA
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MSWSH-100-30
A17090
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140-A525-SMD
Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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AGRB03GM
AGRB03GM
IS-95
DS04-259RFPP
140-A525-SMD
Z1 SMD
agere c8 c1
atc600
JESD22-C101A
Sprague Electric
SMD MOSFET N Z4
agere c8
vj1206y223kxa
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VBT1-S5-S12-SMT
Abstract: atc 1117 0-5 v to 4-20 ma converter
Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch
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MSWSE-040-10
0805P)
A17089
VBT1-S5-S12-SMT
atc 1117
0-5 v to 4-20 ma converter
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J293
Abstract: ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure. Its
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MWIC930
MWIC930R1
MWIC930GR1
J293
ATC600S150JW
J1805
ATC600S6R8CW
atc600s1
J053
TO272
RM73B2BT
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ATC600S100JW
Abstract: m 53206 ATC600S100J MCR10EZHF49R9 ECD-G0ER709 ECD-G0ER909 GRM2165C2A71JA01D GRM2195C2A102JA01D RO4350 PFQN-16
Text: RoHS Compliant 3.4—3.8 GHz 10 W Power PHEMT Advanced Datasheet Oct. 10, 2005 MAAP-003438-010PP0 Package PFQN-16 Lead Features • This RF Power transistor is an unmatched GaAs PHEMT which exhibits high gain and linearity performance in a lead-free 3mm 16-lead PQFN
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MAAP-003438-010PP0
PFQN-16
16-lead
ATC600S100JW
m 53206
ATC600S100J
MCR10EZHF49R9
ECD-G0ER709
ECD-G0ER909
GRM2165C2A71JA01D
GRM2195C2A102JA01D
RO4350
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-
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MRF6P3300H
MRF6P3300HR3/HR5
MRFE6P3300HR3/HR5.
PCN12895
MRF6P3300HR3
MRF6P3300HR5
MRF6P3300HR3
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ATC600S10
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth
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MRF8P20165WH
MRF8P20165WHR3
MRF8P20165WHSR3
MRF8P20165WHR3
ATC600S10
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MWIC930N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to
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MWIC930N
MWIC930NR1
MWIC930GNR1
MWIC930N
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Untitled
Abstract: No abstract text available
Text: Document Number: MWIC930 Freescale Semiconductor Rev. 5, 5/2006 Replaced by MWIC930NR1 GNR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MWIC930
MWIC930NR1
MWIC930
MWIC930R1
MWIC930GR1
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J252
Abstract: A113 AN1955 AN1987 MWIC930 MWIC930GNR1 MWIC930GR1 MWIC930NR1 MWIC930R1
Text: Freescale Semiconductor Technical Data MWIC930 Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage structure. Its
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MWIC930
MWIC930
MWIC930NR1
MWIC930GNR1
MWIC930R1
MWIC930GR1
J252
A113
AN1955
AN1987
MWIC930GR1
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Untitled
Abstract: No abstract text available
Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch
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MSWSE-040-10
0805P)
A17089
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RM73B2AT102J
Abstract: free schematic diagram of IC 4558 free IC 4558 RM73B2AT102J DATASHEET RM73B2BT105J INF 740 J7440 RM73B2BT KOA RM73B2AT102J DATASHEET Fet j584
Text: Document Number: MWIC930 Freescale Semiconductor Rev. 5, 5/2006 Replaced by MWIC930NR1 GNR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MWIC930
MWIC930NR1
MWIC930
MWIC930R1
MWIC930GR1
RM73B2AT102J
free schematic diagram of IC 4558
free IC 4558
RM73B2AT102J DATASHEET
RM73B2BT105J
INF 740
J7440
RM73B2BT
KOA RM73B2AT102J DATASHEET
Fet j584
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HEADER7X2
Abstract: 915055 circuit diagram for sma 4038 ic sma 4038 capacitor 10nj MURATA-LQH32MN sma003 BMIS-203 ATC600S0R 6CW2
Text: Dolphin Frequency Hopping Spread Spectrum Evaluation Kit Hardware and Software User’s Guide 2005 SLLU090F IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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SLLU090F
HEADER7X2
915055
circuit diagram for sma 4038
ic sma 4038
capacitor 10nj
MURATA-LQH32MN
sma003
BMIS-203
ATC600S0R
6CW2
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bzx79c5v6
Abstract: zener diode 1w, 5v 2.1 ghz 4 WATTS 5v
Text: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features A broadband, high linearity, medium power series shunt integrated switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TDSCDMA and other wireless infrastructure applications. It
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MSWSS-020-40
A17088
bzx79c5v6
zener diode 1w, 5v
2.1 ghz 4 WATTS 5v
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MSWSE-040-10
Abstract: No abstract text available
Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch
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MSWSE-040-10
0805P)
A17089
MSWSE-040-10
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Untitled
Abstract: No abstract text available
Text: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Plastic Molded DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other
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MSWSH-020-30
A17087,
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Untitled
Abstract: No abstract text available
Text: Document Number: MWIC930N Rev. 6, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescales newest High Voltage 26 to
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MWIC930N
MWIC930N
MWIC930NR1
MWIC930GNR1
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ATC600S2R7BT250XT
Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth
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MRF8P20165WH
MRF8P20165WHR3
MRF8P20165WHSR3
MRF8P20165WH
ATC600S2R7BT250XT
ATC600S0R5BT250XT
ATC600S1R0BT250XT
MRF8P20165WHS
ATC600S1R0BT
ATC600S0R6BT250XT
ATC600S100JT250XT
ATC600F0R1BT250XT
ATC600S1R5BT250XT
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Aeroflex ATC 600
Abstract: bzx79-b24 MSWSH-020-30
Text: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Plastic Molded DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other
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MSWSH-020-30
A17087
Aeroflex ATC 600
bzx79-b24
MSWSH-020-30
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MSWSE-040-1
Abstract: R1751 BSS84LT1 SN74ACT14 20v atc 0603 capacitor 0401 resistor VBT1-S5-S12-SMT atc 1117
Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Description Features A broadband, high linearity, medium power series switch element in a 2.0 X 1.3 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other wireless infrastructure applications. It is also suited for
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MSWSE-040-1
0805P)
A17089
MSWSE-040-1
R1751
BSS84LT1
SN74ACT14
20v atc 0603 capacitor
0401 resistor
VBT1-S5-S12-SMT
atc 1117
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SMD-B 053
Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0
Text: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:
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FPD4000AF
FPD4000AF
FPD4000AF-EB
EB-2000AS-AB
880MHz)
EB-2000AS-AA
85GHz)
EB-2000AS-AC
EB-2000AS-AE
SMD-B 053
BTS 308
atc600
ATC600S1R0
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