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    Abstract: No abstract text available
    Text: ^ A T bT Preliminary Data Sheet January 1992 ATT7C106 Microelectronics High-Speed CMOS SRAM 1 Mbit 256K X 4 , Common I/O Features • Low-power operation — Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs); 11 mW (CMOS inputs) ■ Highspeed— 15 ns maximum access time


    OCR Scan     		PDF ATT7C106 28-pin, ATT7C106 7C106 28-Pin. ATT7C106P-25

    CC4 22

    Abstract: No abstract text available
    Text: iPR 1 9 1993 = A TaT Preliminary Data Sheet January 1992 ATT7C106 Microelectronics High-Speed CMOS SRAM, 1 Mbit 256K x 4 Common I/O, Output Enable Features • Low-power operation — Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs):


    OCR Scan     		PDF ATT7C106 28-pin, ATT7C106 DS91-007 CC4 22