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    AUG11 Search Results

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    AUG11 Price and Stock

    3M Interconnect AUG11C02AB20

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    DigiKey AUG11C02AB20 Bulk 1
    • 1 $2840.02
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    • 100 $2840.02
    • 1000 $2840.02
    • 10000 $2840.02
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    Foryard FYS-5211AUG-11

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Maritex FYS-5211AUG-11 582
    • 1 $0.228
    • 10 $0.22
    • 100 $0.206
    • 1000 $0.193
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    AUG11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Definition MUSA VJF1224HDM FEATURES • Enhanced performance  Standard MUSA compatibility  Choice of panel colours Our Musa connectors have been redesigned to give improved performance up to 3 Gbit/s. Return loss is better than –15dB up to 1.5Ghz and better than –10dB up to 3Ghz as required by SMPTE424M.


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    PDF VJF1224HDM SMPTE424M. 1080P CuZn39Pb2 Aug-11

    l1117 18

    Abstract: l1117 1.2 L1117 L1117 33 l1117 g L1117-3.3 L1117-1.8 l111718 voltage regulator l1117 L1117-18
    Text: NIKO-SEM 1A Fixed and Adjustable Low Dropout Linear Regulator LDO L1117 Series SOT-223, TO-252, TO-220,TO-263 GENERAL DESCRIPTION FEATURES The L1117 Series are positive and low dropout three-terminal voltage regulators with 1A output current capability. These devices


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    PDF L1117 OT-223, O-252, O-220 O-263 OT-223 O-252 l1117 18 l1117 1.2 L1117 33 l1117 g L1117-3.3 L1117-1.8 l111718 voltage regulator l1117 L1117-18

    Untitled

    Abstract: No abstract text available
    Text: 5SDD 38F2000 5SDD 38F2000 Old part no. DV 818-3800-20 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 000 I FAVm = 3 730 I FSM = 34 000 V TO = 0.915


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    PDF 38F2000 1768/138a, DV/158/05a Aug-11 Aug-11

    ABB thyristor

    Abstract: thyristor ABB pt 2399
    Text: 5STR 07F2541 5STR 07F2541 Old part no. TP 918F-675-25 Reverse Conducting Thyristor Properties Integrated freewheeling diode Optimized for low dynamic losses Applications Traction Key Parameters V DRM = I TAVm = I TSM = V TO = rT = tq = 2500 760 14 000 1.391


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    PDF 07F2541 918F-675-25 07F2541 1768/138a, TP/174/05a Aug-11 ABB thyristor thyristor ABB pt 2399

    dt 92 abb

    Abstract: No abstract text available
    Text: 5SDD 36K5000 5SDD 36K5000 Old part no. DV 889B-3600-50 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Explosive protection Key Parameters V RRM = 5 000 I FAVm = 3 638


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    PDF 36K5000 889B-3600-50 1768/138a, DV/211/06a Aug-11 dt 92 abb

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT


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    PDF 04D4504 1768/138a, DM/219/06a Aug-11 04D4504A Aug-11

    5SDD31H6000

    Abstract: No abstract text available
    Text: 5SDD 31H6000 5SDD 31H6000 Old part no. DV 889-3300-60 High Voltage Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 6 000 I FAVm = 3 246 I FSM = 40 000 V TO


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    PDF 31H6000 1768/138a, DV/259/08b Aug-11 Aug-11 5SDD31H6000

    Untitled

    Abstract: No abstract text available
    Text: BAR89. Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion


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    PDF BAR89. BAR89-02L BAR89-02LRH BAR89-02LRH* BAR89-02L, BAR89-02LRH,

    Untitled

    Abstract: No abstract text available
    Text: BAR89.E6816 Hitachi Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1 GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion


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    PDF BAR89. E6816 BAR89-02L BAR89-02LRH BAR89-02LRH* BAR89-02L, Aug-11-2004

    5SDF06D2504

    Abstract: abb 800
    Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


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    PDF 06D2504 1768/138a, DM/267/08a Aug-11 06D250A Aug-11 5SDF06D2504 abb 800

    5sdd24f2800

    Abstract: No abstract text available
    Text: 5SDD 24F2800 5SDD 24F2800 Old part no. DV 818-2480-28 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 800 I FAVm = 2 596 I FSM = 30 000 V TO = 0.906


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    PDF 24F2800 1768/138a, D/059/02c Aug-11 Aug-11 5sdd24f2800

    5SDD48H3200

    Abstract: No abstract text available
    Text: 5SDD 48H3200 5SDD 48H3200 Old part no. DV 889-4650-32 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 3 200 I FAVm = 4 708 I FSM = 61 000 V TO = 0.992


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    PDF 48H3200 1768/138a, DV/197/06b Aug-11 Aug-11 5SDD48H3200

    5SDF12F3005

    Abstract: dm265 12F3
    Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195


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    PDF 12F3005 12F3005 12F2505 1768/138a, DM/265/08a Aug-11 Aug-11 5SDF12F3005 dm265 12F3

    Untitled

    Abstract: No abstract text available
    Text: 5SDD 20F5000 5SDD 20F5000 Old part no. DV 818-2000-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 978 I FSM = 24 000 V TO = 0.940 rT = 0.284 low forward voltage drop low recovery charge high operating temperature low leakage current


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    PDF 20F5000 1768/138a, D/052/01c Aug-11 Aug-11

    827C-800-50

    Abstract: No abstract text available
    Text: 5SDD 08T5000 5SDD 08T5000 Old part no. DV 827C-800-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 028 I FSM = 12 000 V TO = 0.894 rT = 0.487 low forward voltage drop low recovery charge high operating temperature low leakage current


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    PDF 08T5000 827C-800-50 1768/138a, DV/275/08a Aug-11 Aug-11

    5SDF12T3005

    Abstract: No abstract text available
    Text: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195


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    PDF 12T3005 818C-1200-30 12T3005 12T2505 1768/138a, DM/266/08a Aug-11 5SDF12T3005

    845i

    Abstract: No abstract text available
    Text: 5SDD 09D6000 5SDD 09D6000 Old part no. DV 827-850-60 High Voltage Diode Key Parameters V RRM = 6 000 I FAVm = 845 I FSM = 11 000 V TO = 0.893 rT = 0.647 Properties Low forward voltage drop Low recovery charge High operating temperature Low leakage current


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    PDF 09D6000 1768/138a, DV/261/08a Aug-11 Aug-11 845i

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


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    PDF BFP620 VPS05605 OT343 Aug-11-2004

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


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    PDF BFP620 VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: Data sheet, Rev. 2.1, Sept. 2011 6ED003L02-F Integrated 3 Phase Gate Driver Special Power IC – Drivers N e v e r s t o p t h i n k i n g 6ED003L02-F Integrated 3 Phase Gate Driver 6ED003L02-F Revision History: Previous Version: Page 6 2011-08 Rev. 2.1 2.1


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    PDF 6ED003L02-F Aug-11

    AK8125AV

    Abstract: AK8125A
    Text: AK8125AV Spread Spectrum Clock Generator AK8125AV Features Description Input Frequency: - Crystal: 6.1-36MHz - External: 6.1- 49.92MHz Configurable Spread Spectrum Modulation: The AK8125A is a spread spectrum clock generator designed for general purpose EMI


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    PDF AK8125AV 1-36MHz 92MHz 30KHz AK8125A 10-pin MS1257-E-01 Aug-11 AK8125AV

    YC-160R

    Abstract: cn1e JST B4P-VH
    Text: • Medical & ITE Certifications • BF Rated • Very Low 1" profile • Industry Standard Footprint • Up to 89% Efficient • <0.3W Off-load Power Draw Key Market Segments & Applications Medical MWS65 Series Test & Measurement Point of Sale Datacom 2 x 4” 55 to 67W AC-DC Power Supplies


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    PDF MWS65 230VAC) Aug11 YC-160R cn1e JST B4P-VH

    Untitled

    Abstract: No abstract text available
    Text: NOTES: I MATERIALS TH 1 RD AND - PTFE COPPER 4. 5. R E V 1S I O N S ^ PLATED MI N . 00C THICK ALLOY, NICKEL A RELEASE PLATED THICK) (.000100 DIM WA S 1.65; 7 WA S DIM. A. TEMPERATURE RANGE: -40° C PACKAGING: A. Q U A N T I T Y : S I N G L E PACK B. MARKI NG:


    OCR Scan
    PDF -Aug-11

    SI-52003-F

    Abstract: 52003
    Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC, ELECTRICAL CHARACTERISTICS 2 5 'C 1.0 TURNS RATIO: P1—P3 :(J1—J2)


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    PDF 350uH 100KHz, 2002/95/EC. Aug-11-2008 10/100BT, SI-52003-F SI-52003-F 52003