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Skyworks Solutions Inc AWB7123HM41P8 IC AMP HSDPA 1.93-1.99GHZ 14SMD
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AWB7123HM41P8 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AWB7123HM41P8		Skyworks Solutions	RF/IF and RFID - RF Amplifiers - IC AMP HSDPA 1.93GHZ-1.99GHZ MOD		Original	PDF

AWB7123HM41P8 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123	PDF
AWB7123HM41P8 Abstract: awb7123 Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123 AWB7123HM41P8	PDF
Untitled Abstract: No abstract text available Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123	PDF
Untitled Abstract: No abstract text available Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123	PDF
AWB7123 Abstract: AWB7123HM41P8 Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123 AWB7123HM41P8	PDF
Untitled Abstract: No abstract text available Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123	PDF
Untitled Abstract: No abstract text available Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123	PDF