PC659
Abstract: IPC659G
Text: N E C ELECTRONICS INC SEC / ELECTRON DEVICE 30E D • b427S2S G03047b T ■ DATA SHEE-T Preliminary BIPOLAR ANALOG INTEGRATED CIRCUIT / / _ _ _ _ _ Ä / / P C 6 5 9 8 BIT A/D C O N V E R T E R FOR V ID EO P R O C E S S IN G
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b427S2S
G03047b
uPC659
b4275ES
00304fl4
iPC659
P24GM-50-300B
--2265A
1988M
PC659
IPC659G
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Untitled
Abstract: No abstract text available
Text: bSE D • b427S2S GG37471 257 « N E C E LIGHT EM ITTING DIODE NDL4105A 850 nm O P T IC A L FIBER C O M M U N IC A T IO N A IG aA s LIGH T E M IT T IN G D IO DE N E C ELECTRONICS INC D E S C R IP T IO N N D L 4 1 0 5 A is an AtG aAs light emitting diode, especially designed for an 850 nm light source of optical fiber communications
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b427S2S
GG37471
NDL4105A
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Untitled
Abstract: No abstract text available
Text: m I - - N E C - - ELECTRONICS INC .- - 30E D • b427S2S ODaifllD 2 ■ PHOTO INTERRUPTER P S 5002LR PHOTO 1C INTERRUPTER D E S C R IP T IO N P A C K A G E D IM E N S IO N S Unit : m m The PS5002LR ph oto in terru p te r m odule is a
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b427S2S
5002LR
PS5002LR
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Untitled
Abstract: No abstract text available
Text: 3GE D • b427S2S GOETMlñ 2 ■ S N E C ‘ E L E C T R O N I C S INC LIGHT EMITTING DIODE /_NDL5311P 1 300 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE D ESC RIPTIO N NDL5311P is a 1 300 nm InGaAsP double heterostructure L E D DIP module. It can achieve high optical output power from
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b427S2S
NDL5311P
NDL5311P
bHB75E5
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2SK797
Abstract: No abstract text available
Text: Ôi|b427S2S 6427525 N E C 0Dlflci4S û ELECTRONICS 98D INC 18942 ~ C ~ J3 ~ r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D ESC R IPTIO N The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATU RES
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Jb457S2S
2SK797
2SK797
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Untitled
Abstract: No abstract text available
Text: N EC ELECTRONI CS INC b2E D • b427S2S DDBflOll OHb M N E C E DATA SHEET NEC LASER DIODE MODULE N D L5604P ELECTRON DEVICE 1 3 1 0 n m OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5604P is a 1 310 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module w ith singlemode fiber. It incorpo
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b427S2S
L5604P
NDL5604P
b42752S
0D3flG14
NDL5604P
500pS
b427S2S
bM27525
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uPC1230H2
Abstract: UPC1230H2 circuit UPC1230 UPC1230H 230H2
Text: N E C 6 4 2 75 25 N E C ELECTRONICS INC D5E D | b427S2S GGaETSh T f E L EC TR ONIC S INC 05E 22756 D BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1230H2 r - 7 7 '0 5 - 0 ^ 25 W AF POWER AMPLIFIER D E S C R IP T IO N T h e / iP C 1 2 3 0 H 2 is a class B aud io pow er a m p lifie r in a 12-lead single in-line package, sp e c ific a lly designed fo r ca r stereo
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b427S2S
uPC1230H2
12-lead
/1PC1230H
E75ES
PC1230H2
UPC1230H2 circuit
UPC1230
UPC1230H
230H2
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nec laser diode OTDR
Abstract: NEC LASER DIODE PIN DIP NDL5070 NDL5060 NDL5061 NDL5071 NDL5762P NDL5772P PULSED LASER DIODE
Text: N E C ELECTRONICS INC b2E J> m b427S2S GD37c1cib 131 « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5772P ELECTRON DEVICE 1 5 5 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION N D L 5 77 2P is a 1 5 5 0 nm pulsed laser diode DIP m odule w ith singlem ode fib er and internal th erm o -electric cooler. It is
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bM5752S
D37e1cib
NDL5772P
NDL5772P
b42752S
NDL5060
NDL5061
NDL5070
NDL5071
nec laser diode OTDR
NEC LASER DIODE PIN DIP
NDL5762P
PULSED LASER DIODE
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STC25
Abstract: No abstract text available
Text: bEE » • b427S2S ÜD37Sbb fi7G BNECE Z' N E C ELECTRONICS INC / LASER DIODE N D L 5 6 5 0 1 550 nm OPTICAL FIBER COMM UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DESCRIPTION N D L 5 6 5 0 D is a 1 550 nm D F B {Distributed Feed-back laser dio de e specially designed fo r long distance high cap a city transm is
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bME7525
0D375bfi
NDL5650
STC25
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D485505
Abstract: ax253
Text: m b427S2S 0035734 EMfl JJPD485505 Line Buffer for Communications Systems INECE NEC Electronics Inc. Preliminary Information_ A ugust 1992 N E C ELECTRONICS INC Description Pin Configurations The ¿/PD485505 is a 5048-word by 8-bit d ual-port line buffer fab ric a te d with a silicon-gate CM O S process.
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b427S2S
uPD485505
24-Pin
/PD485505
5048-word
P24GM-50-46QA
49NR-613B
400-mil)
P24V-2
D485505
ax253
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PS5002LR
Abstract: No abstract text available
Text: m I - - N E C - - ELECTRONICS INC .- 30E D • b427S2S ODaifllD 2 ■ PHO TO IN T E R R U PT E R PS5002LR PHOTO 1C IN TER R U PTER DESCRIPTION P A C K A G E D IM E N S IO N S Unit : mm The PS5002LR photo interrupter module is a GaAs Light Emitting Diode coupled to a Si mono
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b427S2S
PS5002LR
PS5002LR
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Optical Detector
Abstract: common cathod PH314 SYM80L
Text: N E C ELECTRONICS INC 30E D • b427S2S 0 0 2 ^ 2 5 7 ■ T ~'V \ ~ Ç 3 > PHOTO DIODE PH314 SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR for DAD, VD PACKAGE DIMENSIONS (Unit : mm 1.8 ± 0.2 1.27 — °MM. ( 0 . 2) “'o.as FEA TU R ES • • • •
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PH314
10Temperature
T-41-53
SYM80L
Vr-15V
Optical Detector
common cathod
PH314
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MC-5192
Abstract: mc5192*- N 5192
Text: N E C D Ë 1 b427S2S QaGflBIG □ ELECTR O NI C S INC 7E THICK FILM HYBRID INTEGRATED CIRCUIT MC-5192 V H F —UHF B R O A D -B A N D A M P L IF IE R DESCRIPTION AND APPLICATIONS The M C -5192 is a th ic k film h y b rid in te gra te d c irc u it designed fo r broad-band
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b427S2S
MC-5192
J22686
MC-5192
mc5192*-
N 5192
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12PG0
Abstract: uPD7821x
Text: N E C E LE CTRONICS INC 3DE » NEC Electronics Inc. • b427S2S GD2t04fl S fxPD7821x Advanced, 8 - Bit Real-Time Control Microcomputers With A / D Converter Description □ Four timer-controlled PWM channels The jiPD78213, |xPD78214, and |jPD78P214 are high-per
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b427S2S
GD2t04fl
uPD7821x
jiPD78213,
xPD78214,
jPD78P214
iPD7821x
addr16'
addr16ifrl
addr16
12PG0
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TIC 33 LCD PIC
Abstract: No abstract text available
Text: b2E D • NEC b427S2S N E C 0035^03 43b ELECTRONICS «NECE INC HPD17P010 4-BIT SINGLE-CHIP MICROCONTROLLER HPD17P010 is the 4-bit single-chip microcontroller for digital tuning system which incorporates the prescaler operational up to 150 MHz, PLL frequency synthesizer, LCD driver, and IF counter.
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b427S2S
uPD17P010
HPD17P010
16-bit
TIC 33 LCD PIC
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Untitled
Abstract: No abstract text available
Text: HI b427S2S 0042010 1GB B N E C E . |\|E C NEC Electronics Inc. A/PD78014 Family |tfPD78011 B/012B/013/014/P014 8 ' Bit»K-Series Microcontrollers General Purpose With A/D Converter September 1993 Description The/¿PD78011B, /JPD78012B, /L/PD78013, //PD78014, and
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b427S2S
/PD78014
tfPD78011
B/012B/013/014/P014)
PD78011B,
/JPD78012B,
/L/PD78013,
//PD78014,
pPD78P014
h427525
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ST2N
Abstract: NDL5300P
Text: 3QE D • b427S2S 002=13=10 0 ■ N E C ELECTRONICS INC LIGHT EMITTING DIODE / N D L5300P 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE MODULE DESCRIPTION NDL5300P is an InGaAsP double heterostructure long wavetength LED module. F EA T U R ES
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4S7525
NDL5300P
NDL5300P
Gl-50
30iiW
If-100
bM27S2S
ST2N
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Untitled
Abstract: No abstract text available
Text: b2E D • b427S2S G03747S «ÎT2 «NECE / N E C ELECTRONICS INC LIG HT EM ITTIN G DIODE / N D L 4 10 5 L 1 8 5 0 nm OPTICAL FIBER COMMUNICATIONS AIGaAs LIGHT EMITTING DIODE DE SC R IPTIO N N D L410 5L1 is an AIGaAs double heterostructure lig h t e m ittin g diode, especially designed fo r a lig h t source fo r optic a l fib e r
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427S2S
G03747
GI-50
GI-50
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Untitled
Abstract: No abstract text available
Text: I N E C ELECTRONICS 30E INC D • b427S2S D03073S & ■ DATA S H E E T Advance Product Information NEC MOS INTEGRATED CIR C U IT ELECTRON DEVICE / ¿ P D 4 7 1 4 - ( RS-232C LINE DRIVER/RECEIVER DESCRIPTION The /uPD4714 is a silicon gate C M O S IC which combines 3 line drivers and 5 receivers com form ing to the
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b427S2S
D03073S
RS-232C
uPD4714
PD4714
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Untitled
Abstract: No abstract text available
Text: N E C E L E C T R O N I C S INC b l4E ]> b427S2S 0030^37 SSO « N E C E ffPD4264400, 4265400 16,777,216 X 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Preliminary September 1993 Description The LfPD4264400 and pPD4265400 are 64M-bit dynamic RAMs organized as 16,777,216 words by 4 bits. They are
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b427S2S
ffPD4264400,
LfPD4264400
pPD4265400
64M-bit
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UPC1871
Abstract: pc2801 uPC1872CU 8122b 427SSS
Text: PRELIMINARY DATA SHEET • b427S2S GGMTBZb 005 HNECE BIPOLAR ANALOG INTEGRATED C IR C U IT ELECTRON DEVICE MP C 1 8 7 2 C U US MTS DECODER D E S C R IP T IO N The m PC1872CU is an integrated circuit fo r US MTS M u lti Channel Television Sound system. A ll functions fo r US M TS
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b427S2S
1872CU
uPC1872CU
uPC1871
juPC1872CU
42PIN
P42C-70-600B
pc2801
8122b
427SSS
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upd23c8000
Abstract: C12OH pd23c8000
Text: N E C ELECTRONICS INC 3fiE D b427S2S 00324^0 3 • NECE {JPD23C8000 8,388,608-Bit Mask-Programmable CMOS ROM NEC NEC Electronics Inc. r ^ 6 -i3 -/r Description Pin Configuration The /JPD23C8000 is a 8,388,608-bit ROM fabricated with CMOS siiicon-gate technology. It is static in operation
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b427S2S
uPD23C8000
608-bit
ThejuPD23C8000
PD23C8000
C12OH
pd23c8000
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169800
Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)
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NE687
OT-143)
NE68718-T1
NE68719-T1
NE68730-T1
NE68733-T1
NE68739-T1
NE68739R-T1
169800
80500 TRANSISTOR
D 5036
cd 4599
4463 B
80500 bb
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4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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