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    BA223 Price and Stock

    SiTime Corporation SIT8924BA-22-33E-8.192000

    MEMS OSC XO 8.1920MHZ LVCM LVTTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8924BA-22-33E-8.192000 79 1
    • 1 $5.08
    • 10 $4.383
    • 100 $3.7862
    • 1000 $3.27477
    • 10000 $3.09212
    		Buy Now

    SiTime Corporation SIT8918BA-22-33E-4.000000

    MEMS OSC XO 4.0000MHZ LVCM LVTTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8918BA-22-33E-4.000000 72 1
    • 1 $5.03
    • 10 $4.339
    • 100 $3.7487
    • 1000 $3.24234
    • 10000 $3.06149
    		Buy Now

    SiTime Corporation SIT1618BA-22-33E-8.000000

    MEMS OSC XO 8.0000MHZ LVCM LVTTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT1618BA-22-33E-8.000000 1
    • 1 $4.72
    • 10 $4.483
    • 100 $3.8934
    • 1000 $3.18548
    • 10000 $2.94952
    		Buy Now

    SiTime Corporation SIT8918BA-22-33S-1.000000

    MEMS OSC XO 1.0000MHZ LVCM LVTTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8918BA-22-33S-1.000000 1
    • 1 $4.72
    • 10 $4.483
    • 100 $3.8934
    • 1000 $3.18548
    • 10000 $2.94952
    		Buy Now

    SiTime Corporation SIT8924BA-22-33N-33.333333

    MEMS OSC XO 33.333333MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8924BA-22-33N-33.333333 1
    • 1 $4.72
    • 10 $4.483
    • 100 $3.8934
    • 1000 $3.18548
    • 10000 $2.94952
    		Buy Now
    Find more BA223 price and stock on Findchips.com

    BA223 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA223 Philips Semiconductors Silicon AM Band Switching Diode Original PDF
    BA223 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA223 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA223 Philips Semiconductors Small Signal Devices - Diodes Scan PDF
    BA223-10 EDAL Industries 1.0A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier Scan PDF
    BA223-10 EDAL Industries Sub Miniature High Voltage Silicon Rectifiers Scan PDF
    BA223-10 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA223-15 EDAL Industries Sub Miniature High Voltage Silicon Rectifiers Scan PDF
    BA223-15 EDAL Industries 1.0A Iout, 1.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    BA223-15 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA223-20 EDAL Industries Sub Miniature High Voltage Silicon Rectifiers Scan PDF
    BA223-20 EDAL Industries 700mA Iout, 2.0kV Vrrm General Purpose Silicon Rectifier Scan PDF
    BA223-20 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA223-25 EDAL Industries Sub Miniature High Voltage Silicon Rectifiers Scan PDF
    BA223-25 EDAL Industries 700mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    BA223-25 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA223-30 EDAL Industries Sub Miniature High Voltage Silicon Rectifiers Scan PDF
    BA223-30 EDAL Industries 500mA Iout, 3.0kV Vrrm General Purpose Silicon Rectifier Scan PDF
    BA223-30 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA223-35 EDAL Industries Sub Miniature High Voltage Silicon Rectifiers Scan PDF

    BA223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA223

    Abstract: BA223-20 BR427-50 BR427-40 dem 20486 syh-ly B427 B427-10 B427-15 B427-20 B427-25
    Text: Sub-Miniature High Voltage Rectifiers Compact tubular construction and flexible leads facilitate circuit mounting, provide excellent thermal conductivity and eliminate sharp edges to reduce corona common to large, rectangular packages. Diodes are manufactured using


    Original     		PDF BA223, BA223 200ma 150ma 1000ma. BAR223-10 BAR223-15 BAR-223-20 BAR-223-25 BA223-20 BR427-50 BR427-40 dem 20486 syh-ly B427 B427-10 B427-15 B427-20 B427-25

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


    Original     		PDF TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT

    BA142

    Abstract: No abstract text available
    Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142

    8a223

    Abstract: BA223 B588-50 BAR223-25 B427 B427-10 B427-15 B427-20 B587 B588
    Text: f EDAL INDUSTRIES INC TS ÍE | 3[m71t, D D D D S M 7- 1 T p z 3 -a s' EDAL Series B427, BA223, B587, B588 v.^;.r Compact tubular construction and flexi­ ble leads facilitate circu it mounting, provide excellent thermal conductivity and elim inate sharp edges to reduce corona common to


    OCR Scan     		PDF BA223, BA223 200ma BA223ln 150mB583 BRS88 200pa 10/xa 500/ua 8a223 B588-50 BAR223-25 B427 B427-10 B427-15 B427-20 B587 B588

    k B688

    Abstract: B688 8a223 BAR223-25 F 13000 B427 B427-10 B427-15 B587 B588
    Text: is EDAL INDUSTRIES INC »EjamsTik Qoooan i I D 7~- ¿ 3-05- EDAL Series B427, BA223, B587, B588 Compact tubular construction and flexi­ ble leads facilitate circuit mounting, provide excellent thermal conductivity and eliminate sharp edges to reduce corona common to


    OCR Scan     		PDF 30TS7ib BA223, BA223 200ma 3D1S71t BB427 BA223 BAR223 k B688 B688 8a223 BAR223-25 F 13000 B427 B427-10 B427-15 B587 B588

    Diode Marking 1e

    Abstract: diode HOH BA223 AM radio AM band switching diode
    Text: N AÍ1ER PHILIPS/DISCRETE b^E D m b b S B ^ l GQEblUS MOM I IAPX BA223 I SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA Continuous reverse voltage


    OCR Scan     		PDF BA223 BA223 DO-34 OD-68) 7Z83041 Diode Marking 1e diode HOH AM radio AM band switching diode

    26166

    Abstract: BA223 AM band switching diode diode D 07-15 15
    Text: SbE T> 71100Sb m 00400*13 333 • P H I N BA223 T-D7-! S' PHILIPS INTERNATIONAL SbE ]> T O SILICON A.M. BAND SWITCHING DIODE The B A 223 is a switching diode in whiskerless glass encapsulation. It is intended fo r band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF 711002b BA223 BA223 DO-34 OD-68) 7Z83041 7Z78761 26166 AM band switching diode diode D 07-15 15

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE b'lE D • bbS3131 DOEblUS 4Q4 « A P X BA223 SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA VR max.


    OCR Scan     		PDF bbS3131 BA223 BA223 DO-34 OD-68)

    BA223

    Abstract: No abstract text available
    Text: BA223 BA223 • ^ ffi^ ìiB / D im e n s io n s Unit : mm V r ' s ? Jl'in^ìììàtSi £ H O BA 223«, ftiffl, ìÉ ic ìiL /c ^ 'r v ic T - r „ iW ltfiia t, = i> x >-9-1:¿u 12:4: ¿-f T'#, f W K S i i l i , W ?ai£A >è& #|al<7)ÌiilST''Ì5è S t.


    OCR Scan     		PDF BA223 BA223 03iaiE<

    S1865

    Abstract: S M B588 60m00 10H515
    Text: _ EDAL Series B427, BA223, B587, B588 Com pact tu b u lar co nstru ctio n and flexi­ Se rie s B427 ble le a d s fa c ilita te c irc u it m o u n tin g , p ro v id e all e x c e lle n t th e rm al c o n d u c tiv ity a n d e lim in ate


    OCR Scan     		PDF BA223, BA223 200jua 500/ia S1865 S M B588 60m00 10H515

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    BA223

    Abstract: No abstract text available
    Text: BA223 B A 2 2 3 £ " 7 • ^ J f i^ j iE I / D im e n s io n s U n it : mm B A 2 2 3 li, I t i l i , Ì Ì I C ^ U / J Ì J ' Ì v I C T 'f o T 'i , - tO T S Ìflli, •7'f S to 7 t— -5», l $ É 7 ^ f A ' Y 7 V - Ì Ì i a^ (7) E 16 H 4- tS ffl ^ ÓJgg T ' r o M ftM 3tEl i 200 m A a* f i


    OCR Scan     		PDF BA223 BA223 GNDlC45

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    PS224

    Abstract: BA225 CR TIMER PS 224
    Text: CR timer I BA225/BA225F/BA235/BA226/BA226F/BA236 The BA225, BA225F, BA235, BA226, BA226F, and BA236 are m onolithic ICs having independent mono and multi circuits which consum e very low current 0,75mA typ. . Using external resistors and capacitors, the timing control


    OCR Scan     		PDF BA225/BA225F/BA235/BA226/BA226F/BA236 BA225, BA225F, BA235, BA226, BA226F, BA236 100ms. PS224 BA225 CR TIMER PS 224

    BA226 diode

    Abstract: BU2305
    Text: Standard ICs Operational amplifier /co m p ara to r •Operational amplifier Part No. Supply voltage BA10324A/AF/AFV 3 -3 0 BA10358/F/N 3—30 1 ± 2 — ±18 BA4558/F/N ± 4 — ±18 BA728/F/N ± 2 — ±16 BA15532/F/N ± 3 -± 2 0 BA4510F ± 1 -± 3 .5 BA4560/F/N


    OCR Scan     		PDF BA10324A/AF/AFV BA10358/F/N BA14741/F BA4558/F/N BA728/F/N BA15218/F/N BA15532/F/N BA4510F BA4560/F/N P-B14 BA226 diode BU2305