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    MRC223

    Abstract: BSP130 MRC21B
    Text: Philips Semiconductors bb53S31 0023047 'ìfll B A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 N AMER P H IL IP S /D IS C R E T E FEATURES b7E D QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • No secondary breakdown.


    OCR Scan     		bb53S31 OT223 OT223 BSP130 MRC223 BSP130 MRC21B PDF

    MPSA25

    Abstract: npn transistor t12 MPSA75 MPSA76 MPSA77
    Text: fe^E ]> • bb53S31 D02ÔD23 747 MPSA75 MPSA76 MPSA77 N AI1ER PHILIPS/DISCRETE PNP DARLINGTON TRANSISTOR PNP small-signal Darlington transistors, each in a plastic TO-92 envelope. NPN complementary types are MPSA25, 26, and 27. Q UICK REFERENCE D A T A Collector-em itter voltage


    OCR Scan     		bb53S31 MPSA75 MPSA76 MPSA77 MPSA25, NECC-C-002 MPSA25 npn transistor t12 MPSA77 PDF

    BFY90 PHILIPS

    Abstract: BFW92 BFW92 sot23 BFS17 BFY90 X3A-BFW92 Philips BFy90 philips bfw92
    Text: Philips Semiconductors _ • bb53S31 0032220 APX 254 Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 N AMER PHILIPS/DISCRETE DESCRIPTION bRE 3> MECHANICAL DATA Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)


    OCR Scan     		bb53S31 X3A-BFW92 BFW92 BFY90 BFS17 X3A-BFW92 URV-3-5-52/733 BFY90 PHILIPS BFW92 BFW92 sot23 BFS17 BFY90 Philips BFy90 philips bfw92 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS P B Y R 10100 se rie s Schottky Barrier rectifier diodes Product specification Fiie under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS bb53S31 0 032^2 A17 Product s pacification Philips Sem iconductor* PBYR10100 series


    OCR Scan     		bb53S31 PBYR10100 O220AC bbS3T31 PDF

    d0245

    Abstract: BCW30 BCW29 IEC134 332 z marking, sot-23
    Text: •I bb53S31 DD^MSbl MTb H A P X N AUER P H I L I P S / D I S C R E T E BCW29 BCW30 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.


    OCR Scan     		bb53S31 DQ545bl BCW29 BCW30 200juA OT-23. bbS3131 BCW30 7Z68043 d0245 BCW29 IEC134 332 z marking, sot-23 PDF

    BFG195

    Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor
    Text: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband


    OCR Scan     		bbS3T31 0D313M4 BFG195 BFG195 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53S31 DDEba^l 7bO H A P X N AUER PHILIPS/DISCRETE fc.TE 1N914 1N916 T> HIGH-SPEED SILICON DIODES Planar e p ita x ia l diodes intended fo r general purpose a p p lications. Q U IC K R E F E R E N C E D A T A C o n tinuous reverse voltage Vr max. R epetitive peak reverse voltage


    OCR Scan     		bb53S31 1N914 1N916 OD-27 1N914: 1N916: PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53S31 OQBSEbb IBB « A P X Philips Semiconductors _ Preliminary specification NPN 1 GHz wideband transistor BFS17W N A PIER PHILIPS/DISCRETE DESCRIPTION b7E PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is


    OCR Scan     		bb53S31 BFS17W OT323 BFS17W BFS17. PDF

    Untitled

    Abstract: No abstract text available
    Text: I l b^E D • APX bb53S31 002b544 1T1 A N AMER PHILIPS/DISCRETE BYD11 SERIES CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded SOD-91 ID* envelope, intended for general purpose rectifier applications.


    OCR Scan     		bb53S31 002b544 BYD11 OD-91 BYD11D PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bSE 1> • bb53S31 002clbbb 41S HIAPX I BLY87C A _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and


    OCR Scan     		bb53S31 BLY87C Q0ETb73 PDF

    1ehj3

    Abstract: BUK581-60A Transistor 8d4
    Text: N AUER PHILIPS/DISCRETE bRE D • bb53S31 DDaDflaQ 604 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope


    OCR Scan     		bbS3S31 BUK581-60A OT223 3Gfl35 BUK581-60A OT223. 1ehj3 Transistor 8d4 PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability


    OCR Scan     		bb53T31 BFQ67W OT323 UBC870 OT323. OT323 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.


    OCR Scan     		BD950; BD954; O-220 BD949; BD950 BD950 BD952. BD054 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bSE D bbsa^ai □ D27bBL bSb IAPX D r BF422 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelope primarily intended fo r class-B video output stages in colour television and professional monitor equipment. P-N-P complements are BF421 and BF423.


    OCR Scan     		D27bBL BF422 BF421 BF423. BF420 0027bflfl PDF

    BCW69

    Abstract: BCW70 IEC134 marking 2rr
    Text: •I bbSBTBl ÜDSMSêl 5=54 H A P X N AMER PHILI P S / D I S C R E T E BCW69 BCW70 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icro m in ia tu re plastic envelope, intended fo r lo w level general purpose a p p li­ cations in th ic k and th in -film circuits.


    OCR Scan     		bbS3T31 BCW69 BCW70 BCW69 7Z68043. BCW70 IEC134 marking 2rr PDF

    QS 100 NPN Transistor

    Abstract: transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor
    Text: • P hilips Sem iconductors •— bb S3 T3 1 D0 25 17 5 254 « A P X N AUER P H I L I P S / D I S C R E T E Product specification b7E NPN 5 GHz wideband transistor DESCRIPTION fc BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use


    OCR Scan     		bbS3T31 D025175 BFR93 ON4186) BFT93. QS 100 NPN Transistor transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor PDF

    1521 n-p-n

    Abstract: BSR17A IEC134 BSR17A equivalent
    Text: • bbS3T31 N AMER 0025577 7 50 H A P X PHILIPS/DISCRETE b7E BSR17A D _y v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon tran sisto r in a m ic ro m in ia tu re plastic envelope intended fo r sw itching and linear applii tio n s in th ic k and th in -film circuits.


    OCR Scan     		bbS3T31 BSR17A OT-23. bbS3131 1521 n-p-n BSR17A IEC134 BSR17A equivalent PDF

    2N4393

    Abstract: 2N4392 2N4391 transistor 4393
    Text: 2N4391 to 4393 J ' - N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for low power, chopper or switching,


    OCR Scan     		2N4391 2N4392 2N4393 003537b 2N4393 transistor 4393 PDF

    potentiometer 502 TJ

    Abstract: BLF276 mra843
    Text: Philips Semiconductors 00300GÔ □□□ I A P X eliminary specification BLF276 VHF power MOS transistor N AMER PHILIPS/DISCRETE LIE J> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement


    OCR Scan     		OT119 PINNING-SOT119D3 BLF276 VBB07S-2 MBA379 MRA936 potentiometer 502 TJ BLF276 mra843 PDF

    transistor n53

    Abstract: BC869-10
    Text: bbS3^31 00244*13 N AUER PHILIPS/DISCRETE • APX BC869 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output


    OCR Scan     		BC869 BC868/BC869 h\n53 transistor n53 BC869-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


    OCR Scan     		J308/309/310 -TO-92 MCD212 bbS3831 PDF

    bd950

    Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
    Text: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


    OCR Scan     		BD950; BD954; T0-220 BD949; BD950J O-22cturer BD950 Z82145 7Z82142 80954 b0952 B0950 BD949 BD954 USA060-1 PDF

    smd 2t1

    Abstract: PMBTA64 smd transistor 2t1 MARKING CODE SMD IC marking p2U PMBTA63 2T1 SOT-23 sot-23 MARKING CODE 2T1
    Text: • bbSBTai □□2SficlLi 355 M A P X N AMER P HI L IP S/DI SCRETE PMBTA63 PMBTA64 b?E i> P-N-P SMALL-SIGNAL DARLINGTON TRANSISTORS P-N-P small-signal da rlin g to n transistors in a m icro m in ia tu re SM D envelope SOT-23 . Designed p rim a rily fo r p re a m p lifie r in p u t a pplications requiring high in p u t impedance.


    OCR Scan     		PMBTA63 PMBTA64 OT-23) PMBTA13/14. PMBTA64 smd 2t1 smd transistor 2t1 MARKING CODE SMD IC marking p2U 2T1 SOT-23 sot-23 MARKING CODE 2T1 PDF

    BC550

    Abstract: BC549 BC550 equivalent BC550C Amplifier with transistor bc549 bc550 noise figure bc549 equivalent TBC549 BC550C equivalent bub49
    Text: N AMER PHILIPS/DISCRETE b^E » • btS3T31 G0575bb 7ST * A P X A B U b4y BC550 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.


    OCR Scan     		QDE75bb BUb49 BC550 BC549 0D27573 bbS3T31 002757M BC550 BC550 equivalent BC550C Amplifier with transistor bc549 bc550 noise figure bc549 equivalent TBC549 BC550C equivalent PDF