TC200G02 toshiba
Abstract: TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS
Text: ASIC DATA BOOK TC200G/E SERIES MACROCELLS Non-liner Delay Models 1997 ASIC Data Book TC200G/E SERIES MACROCELLS (Non-linear Delay Models) Published in July, 1996 Document ID: 451V1CA (C) Copyright 1996 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The
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TC200G/E
451V1CA
TC200G02 toshiba
TC200G70
bt816
cnh 743
YMUX24H
toshiba TC200
CNH 532
TC200E240
Transistor AC 51 0865 75 834
BT16ODFS
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Untitled
Abstract: No abstract text available
Text: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features
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BD241C
BD242B
BD242C
BD242B
BD241C
BD242C
BD241C/D
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Untitled
Abstract: No abstract text available
Text: BD243B, BD243C NPN BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS
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BD243B,
BD243C
BD244B,
BD244C
BD244B
BD243C,
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BD24x
Abstract: BD241CG BD242CG
Text: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features
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BD241C
BD242B
BD242C
BD241C,
BD242C
O-220
BD241C/D
BD24x
BD241CG
BD242CG
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Untitled
Abstract: No abstract text available
Text: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features
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BD241C
BD242B
BD242C
BD241C,
BD241C/D
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1N5825
Abstract: BD243B BD243BG BD243C BD243CG BD244B BD244C MSD6100 BD243C APPLICATION
Text: BD243B, BD243C* NPN BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features http://onsemi.com 6 AMPERE
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BD243B,
BD243C*
BD244B,
BD244C*
BD243C
BD244C
BD244B
BD243C,
BD244C
1N5825
BD243B
BD243BG
BD243CG
BD244B
MSD6100
BD243C APPLICATION
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BD243CG
Abstract: WT1D
Text: BD243B, BD243C NPN BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS
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BD243B,
BD243C
BD244B,
BD244C
BD244B
BD243C,
BD244C
BD244B
BD243CG
WT1D
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BD241C-D
Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG BD242B equivalent
Text: BD241C NPN , BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON
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BD241C
BD242B
BD242C
BD241C
BD242C
BD241C,
O-220
BD241C/D
BD241C-D
BD241CG
BD242B
BD242BG
BD242CG
BD242B equivalent
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BD241C-D
Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG
Text: BD241C NPN , BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON
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BD241C
BD242B
BD242C
BD241C
BD242C
BD241C,
O-220
BD241C/D
BD241C-D
BD241CG
BD242B
BD242BG
BD242CG
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Untitled
Abstract: No abstract text available
Text: BD243B, BD243C NPN , BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS
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BD243B,
BD243C
BD244B,
BD244C
BD244B
BD243C,
BD244C
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1N40017
Abstract: 1a7 sot-23
Text: BRIDGE Product Part nbrs Case Type BDB-1 DB-1 BDB101-107 DB101-107, S, DB151157,S Case 40 Case 17 Plating Prior to Jan 2005 Post Jan 2005 Lead/ Tin Pb/Sn Tin (Sn) Lead/ Tin (Pb/Sn) Tin (Sn) BR3 BR305-310 Case 22 Tin (Sn) Tin (Sn) BR6 BR605-610 Case 25 Tin (Sn)
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BDB101-107
DB101-107,
DB151157
BR305-310
BR605-610
BR805-810,
BR1005-
SR3020C-3060C,
SR5020C-5060C,
SF301C307C,
1N40017
1a7 sot-23
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bd244c
Abstract: BD243B 1N5825 BD243BG BD243C BD243CG BD244B MSD6100
Text: BD243B, BD243C* NPN BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS
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BD243B,
BD243C*
BD244B,
BD244C*
BD243C
BD244C
BD244B
BD243C,
BD244C
BD243B
1N5825
BD243BG
BD243CG
BD244B
MSD6100
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toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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