A12L
Abstract: A14L IDT70V3579 IDT70V3579S
Text: HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access Commercial: 5/6ns max. Pipelined output mode
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IDT70V3579S
100MHz
70V3579
36-Bit)
A12L
A14L
IDT70V3579
IDT70V3579S
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70V3569
Abstract: A12L A13L IDT70V3569 IDT70V3569S
Text: HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V3569S Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed clock to data access
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IDT70V3569S
133MHz
133MHz
wri12/99:
133MHz,
70V3569
A12L
A13L
IDT70V3569
IDT70V3569S
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schema UP 5135
Abstract: voltmetre diode catalogue military passive component bridge rectifier Facon v10471 et 1102 EUROFARAD 5027A zx 1052
Text: NOUVELLE EDITION NEW ISSUE Filtres “EMI - RFI” “EMI - RFI” Filters CATALOGUE 029 PRODUCT CATALOG 029 w w w. e u r o f a r a d . c o m certifications ISO 9002 : 001-96 / 005-96 Code OTAN : F 1379 NATO Code : F 1379 S.A.S. au capital de 20 246 400 €
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tdc 310
Abstract: ba6l BA6R 10 35L U1
Text: HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip
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200MHz
166MHz
133MHz)
14Gbps
SMEN-01-04
BF-208
tdc 310
ba6l
BA6R
10 35L U1
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ba6l
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks – 2 megabits of memory on chip
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200MHz
166MHz
133MHz)
14Gbps
SMEN-01-05
SMEN-01-04
ba6l
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CYD01S36V
Abstract: CYD02S36V CYD04S36V CYD09S36V CYD18S36V 1.0mm pitch BGA
Text: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V PRELIMINARY FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and
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CYD01S36V
CYD02S36V/CYD04S36V
CYD09S36V/CYD18S36V
FLEx36TM
32K/64K/128K/256K/512
FLEx36
18-Mbit
CYD01S36V
CYD02S36V
CYD04S36V
CYD09S36V
CYD18S36V
1.0mm pitch BGA
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IDT70T659
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ Busy and Interrupt Flags On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port
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256/128K
100mV)
150mV
256-ball
208-pin
208-ball
IDT70T659
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10 35L U4
Abstract: 70V7589 IDT70V7589 IDT70V7589S BA5L
Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7589S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks
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IDT70V7589S
166MHz
133MHz)
12Gbps
SMEN-01-05
SMEN-01-04
10 35L U4
70V7589
IDT70V7589
IDT70V7589S
BA5L
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IDT70T659
Abstract: 9S12 CAN 9S12
Text: Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T651/9S HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port
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IDT70T651/9S
256/128K
100mV)
150mV
256-ball
208-pin
208-ball
IDT70T659
9S12 CAN
9S12
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70V7519
Abstract: IDT70V7519 IDT70V7519S ba6l
Text: HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip
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200MHz
166MHz
133MHz)
14Gbps
BC-256
70V7519
IDT70V7519
IDT70V7519S
ba6l
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A17R-A0R
Abstract: A17L-A0L 7144
Text: HIGH-SPEED 1.8V 256/128K x 36 IDT70P3519/99 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V/2.5V/1.8V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location Low Power High-speed data access
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256/128K
IDT70P3519/99
200MHz
166MHz)
14Gbps
200MHz
5T2010
5T9010
A17R-A0R
A17L-A0L
7144
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O23R
Abstract: o32l 70V3579 A12L A14L IDT70V3579 IDT70V3579S optl p2 3.5mm
Text: HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70V3579S Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed clock to data access
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IDT70V3579S
133MHz
133MHz
O23R
o32l
70V3579
A12L
A14L
IDT70V3579
IDT70V3579S
optl
p2 3.5mm
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IDT70T3589
Abstract: IDT70T3599 70T359 70T3589
Text: HIGH-SPEED 2.5V 256/128/64K x 36 IDT70T3519/99/89S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
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256/128/64K
IDT70T3519/99/89S
200MHz
166MHz
133MHz)
14Gbps
IDT70T3589
IDT70T3599
70T359
70T3589
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70T3589
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 256/128/64K x 36 IDT70T3519/99/89S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
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256/128/64K
IDT70T3519/99/89S
200MHz
166MHz
133MHz)
14Gbps
70T3589
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B12 IC marking code
Abstract: 70V3599 A12L IDT70V3599 IDT70V3599S
Text: HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V3599S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
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IDT70V3599S
166MHz
133MHz)
12Gbps
166MHz
36-Bit)
B12 IC marking code
70V3599
A12L
IDT70V3599
IDT70V3599S
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BE5L
Abstract: CYD18S18V18 CYD09S36V18 CYD18S36V18 SKR 175 FullFlex36
Text: FullFlex FullFlex Synchronous SDR Dual Port SRAM Features Functional Description • True dual port memory enables simultaneous access to the shared array from each port ■ Synchronous pipelined operation with Single Data Rate SDR operation on each port
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IDT70T659
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.
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256/128K
10/12/15ns
IDT70T651/9
IDT70T651/9S
208-ball
BF-208)
70T651
70T659
IDT70T659
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FullFlex36
Abstract: No abstract text available
Text: FullFlex FullFlex Synchronous DDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with selectable Double Data Rate DDR or Single Data Rate (SDR) operation on each port
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36-Gb/s
484-ball
256-ball
FullFlex72
CYDD36S72V18)
CYDD18S72V1t
27mmx27mmx2
36Mx36
36Mx18
FullFlex36
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FullFlex36
Abstract: No abstract text available
Text: PRELIMINARY FullFlex Synchronous DDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with selectable Double Data Rate DDR or Single Data Rate (SDR) operation on each port
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36-Gb/s
484-ball
256-ball
FullFlex72
CYDD36S72V18)
CYDD18S72V18
XS36V18
CYDXXS18V18
BW256
FullFlex36
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FullFlex36
Abstract: No abstract text available
Text: FullFlex FullFlex Synchronous DDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with selectable Double Data Rate DDR or Single Data Rate (SDR) operation on each port
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36-Gb/s
484-ball
256-ball
FullFlex72
CYDD36S72V18)
CYDD18S72V1mation
27mmx27mmx2
36Mx36
36Mx18
FullFlex36
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ic 401
Abstract: LS311
Text: LINEAR SYSTEMS L S 3 1 0 L S 311 L S 3 1 2 L S 313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES V E R Y HIGH GAIN hFE 200 @ 10jjA-1mA TIGHT V BE M ATCH IN G IV BEr V BE2l = 0 -2 m V T Y P - HIGH fT 250M Hz TYP. @ 1mA C1 A B S O L U T E M AXIM U M R A T IN G S N O TE 1
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10jjA-1mA
500mW
250mW
LS310:
LS312
LS313:
LS310,
forLS312:
ic 401
LS311
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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BFY81
Abstract: BE2L
Text: BFY81 SILICON PLANAR NPN DUAL, LOW-NOISE, LOW-CURRENT AMPLIFIER The BFY 81 is a six term inal device containing tw o isolated high-gain silicon planar epitaxial NPN transistors in Jedec T O -7 7 metal case. The good thermal tracking over a wide current and temperature range offers the c irc u it designer matched transistors w ith specified per
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BFY81
BFY81
BE2L
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC ÍXSTRS/R 6367254 I> F Jb 3 t,7 5 5 L | F> MOTOROLA SC XSTRS/R F O O Ô E 4 4fl 96D 8 2 4 4 8 _7*- □ D - 'U 7 M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage
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MD3250
MD3251
MQ3251
MD3251F
10A-04,
MQ3251
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