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    BFY640 Price and Stock

    Infineon Technologies AG BFY640-04(P)

    NPN Silicon Germanium RF Transistor (Alt: SP000668264)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik BFY640-04(P) 26 Weeks 1
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    Infineon Technologies AG BFY640-04(ES)

    Trans RF BJT NPN 4V 0.05A 4-Pin Micro-X (Alt: SP000668266)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik BFY640-04(ES) 26 Weeks 1
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    BFY640 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY640 (ES) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: --; Package: Micro-X; VCEO (max): 4.0 V; IC(max): 50.0 mA; Ptot (max): 200.0 mW; fT (typ): 40.0 GHz; Original PDF
    BFY640 (P) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: --; Package: Micro-X; VCEO (max): 4.0 V; IC(max): 50.0 mA; Ptot (max): 200.0 mW; fT (typ): 40.0 GHz; Original PDF

    BFY640 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFY640-04

    Abstract: bfy640 BFY640 ES
    Text: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ


    Original
    BFY640 BFY640-04 bfy640 BFY640 ES PDF

    Untitled

    Abstract: No abstract text available
    Text: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


    Original
    BFY640 BFY640B PDF

    Untitled

    Abstract: No abstract text available
    Text: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ


    Original
    BFY640 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


    Original
    BFY640 BFY640B PDF

    npn transistor high current

    Abstract: transistor "micro-x" "marking" 3 BFY640 germanium microwave Micro-X Marking E RF TRANSISTOR NPN MICRO-X low noise Micro-X marking "K"
    Text: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


    Original
    BFY640 BFY640B npn transistor high current transistor "micro-x" "marking" 3 germanium microwave Micro-X Marking E RF TRANSISTOR NPN MICRO-X low noise Micro-X marking "K" PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original
    B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF