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Qualcomm DK-QCC5126-VFBGA90-A-0 DEV KIT, DK-QCC5126-VFBGA90-A-0,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DK-QCC5126-VFBGA90-A-0	Box	13		1	1 $800 10 $800 100 $800 1000 $800 10000 $800	Buy Now
Qualcomm DK-QCC5144-VFBGA90-A-0 DEV KIT, DK-QCC5144-WLCSP94-A-0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DK-QCC5144-VFBGA90-A-0	Bulk	13		1	1 $800 10 $800 100 $800 1000 $800 10000 $800	Buy Now
Qualcomm DB-QCC5126-VFBGA90-A-0 DEV KIT, DB-QCC5126-VFBGA90-A-0,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DB-QCC5126-VFBGA90-A-0	Box	12		1	1 $200 10 $200 100 $200 1000 $200 10000 $200	Buy Now
Qualcomm DB-QCC3040-VFBGA90-A-0 DEV KIT, DB-QCC3044-WLCSP94-A-0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DB-QCC3040-VFBGA90-A-0	Bulk	6		1	1 $212.8 10 $212.8 100 $212.8 1000 $212.8 10000 $212.8	Buy Now
Qualcomm DK-QCC5124-VFBGA90-A-0 DEV KIT, DK-QCC5124-VFBGA90-A-0,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DK-QCC5124-VFBGA90-A-0	Box	6		1	1 $800 10 $800 100 $800 1000 $800 10000 $800	Buy Now

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BGA90 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: EM48AM3284LBB Revision History Revision 0.1 May. 2010 First release. Revision 0.2 (Sep. 2010) Delete CL=2 parameters Input Leakage Current = -2 A ~ +2 A Change Supply Voltage Rating = -0.5 ~ +2.3 Delete Deep Power Down Mode Change AC timing paramters: tRC & tIS	Original	PDF	EM48AM3284LBB 512Mb 133MHz 166MHz 90Ball-FBGA
Untitled Abstract: No abstract text available Text: ESM T M52D128324A 2E Mobile SDRAM 1M x 32Bit x 4Banks Mobile Synchronous DRAM GENERAL DESCRIPTION FEATURES The M52D128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with high performance CMOS	Original	PDF	M52D128324A 32Bit M52D128324A
Untitled Abstract: No abstract text available Text: ESMT M12D32321A 2G SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES          GENERAL DESCRIPTION The M12D32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.	Original	PDF	M12D32321A 32Bit M12D32321A
BGA90 Abstract: No abstract text available Text: ESMT M52D128324A 2E Mobile SDRAM 1M x 32Bit x 4Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with high performance CMOS	Original	PDF	M52D128324A 32Bit M52D128324A BGA90
rtl nand gate Abstract: TC240C MEGA 8515 str 6307 datasheet STR 6307 POWER TC220C TC240 Edison time delay BGA90 BGA900 Text: TC240 Boosts Systems-on-a-Chip Integration Increasing Need for System Chips The race is on among electronics manufacturers to roll out multimedia products that capture and present information in a combination of text, graphics, video, animation, and sound. Multimedia chips demand ever	Original	PDF	TC240 rtl nand gate TC240C MEGA 8515 str 6307 datasheet STR 6307 POWER TC220C Edison time delay BGA90 BGA900
EM488M3244LBB Abstract: EM488M3244LBB-75F EM488M3244LBB-75FE Text: eorex Preliminary EM488M3244LBB 256Mb 2Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V ±0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8	Original	PDF	EM488M3244LBB 256Mb EM488M3244LBB EM488M3244LBB-75F EM488M3244LBB-75FE
BGA676 Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18	Original	PDF	BGA16A1ATTERNS BGA676 BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	PDF	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Untitled Abstract: No abstract text available Text: ESM T M12L128324A 2E (Preliminary) SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION „ „ „ „ „ „ „ „ JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs	Original	PDF	M12L128324A M12L128324A-5BG2E 200MHz M12L128324A-6BG2E 166MHz M12L128324A-7BG2E 143MHz
EM48AM3284LBB Abstract: No abstract text available Text: EM48AM3284LBB Revision History Revision 0.1 May. 2010 First release. Revision 0.2 (Sep. 2010) Delete CL=2 parameters Input Leakage Current = -2 A ~ +2μA Change Supply Voltage Rating = -0.5 ~ +2.3 Delete Deep Power Down Mode Change AC timing paramters: tRC & tIS	Original	PDF	EM48AM3284LBB 512Mb 133MHz 166MHz 90Ball-FBGA EM48AM3284LBB
EM488M3244VBC-75FE Abstract: EM488M3244VBC EM488M3244VBC-75F Text: eorex Preliminary EM488M3244VBC 256Mb 2Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 2.7V ~ 3.6V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8	Original	PDF	EM488M3244VBC 256Mb EM488M3244VBC-75FE EM488M3244VBC EM488M3244VBC-75F
Untitled Abstract: No abstract text available Text: ESMT M12L128324A 2E SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3)	Original	PDF	M12L128324A M12L128324A-5BG2E 200MHz M12L128324A-6BG2E 166MHz M12L128324A-7BG2E 143MHz M12L128324A
4588c Abstract: MEGA 8515 451c data sheet str 6307 str 6307 datasheet Edison time delay Text: TC240 Boosts Systems-on-a-Chip Integration Increasing Need for System Chips The race is on among electronics manufacturers to roll out multimedia products that capture and present information in a combination of text, graphics, video, animation, and sound. Multimedia chips demand ever	Original	PDF	TC240 4588c MEGA 8515 451c data sheet str 6307 str 6307 datasheet Edison time delay
M12L128324A-5BG2E Abstract: BGA90 Text: ESMT M12L128324A 2E (Preliminary) SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs	Original	PDF	M12L128324A M12L128324A-5BG2E M12L128324A-6BG2E M12L128324A-7BG2E 200MHz 166MHz 143MHz M12L128324A BGA90

SDRAM Abstract: No abstract text available Text: ESMT M12L32321A 2G SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES          GENERAL DESCRIPTION The M12L32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.	Original	PDF	M12L32321A 32Bit M12L32321A SDRAM
Untitled Abstract: No abstract text available Text: ESMT M12L128324A 2M SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (1, 2 & 3 )	Original	PDF	M12L128324A M12L128324A-6BG2M 166MHz M12L128324A-7BG2M 143MHz M12L128324A
Untitled Abstract: No abstract text available Text: ESMT M12L128324A 2E Operation Temperature Condition -40°C~85°C SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs	Original	PDF	M12L128324A M12L128324A-5BIG2E 200MHz M12L128324A-6BIG2E 166MHz M12L128324A-7BIG2E 143MHz