CQY78
Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge
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BPW33)
CQY78
CQY77
CQY78 IV
CQY77A
DIN5033
BPW33
germanium photodiode PIN
phototransistor 600 nm
solar cell transistor infrared
photodiode germanium
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CQY78
Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
Text: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The
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s272
Abstract: No abstract text available
Text: Temic BPY11 S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P V U is a v e ry h ig h se n sitiv e silic o n N P N e p ita x ial p la n a r p h o to tra n s is to r in a sta n d a rd T - 1 % p la stic p a c k age. D u e to its w a te rc le a r e p o x y len s th e d e v ic e is se n sitiv e to
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BPY11
16-Oct-96
BPV11
ct-96
s272
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"PHOTOVOLTAIC CELL"
Abstract: No abstract text available
Text: SIEMENS BPY11P Silicon Photovoltaic Cell Dimensions in inches mm Active area .092 (2.35) .084(2.15) f .083(2.1 1 T 024 (0.6) 1.258 (32) 1.179(30) .118 (3.0)_ .059(1.5) .079 (2)' .00^8 ( 0 .2 ) Stands Soldered t t / t .191 (4.85) 183 (4.657 .026 (0.65) .020 (0.5)
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BPY11P
BPY11P
18-pln
fl535t
"PHOTOVOLTAIC CELL"
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Untitled
Abstract: No abstract text available
Text: SIEMENS BPY11 P Silizium-Fotoelement Silicon Photovoltaic Cell and and Approx. back so ld e r pads lacq uered side weight 0 .1 fSO06032 D iode g Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkmale
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BPY11
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY11P Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • S p e zie ll geeignet für Anw endungen im B ereich von 420 nm bis 1060 nm
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BPY11P
A23Sti05
BPY11
S35b05
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BPY 10
Abstract: C 82 siemens SFH nm Bpy 43 Q60215-Y65
Text: Si-Fotodetektoren Silicon Photodetectors 8. Fotodioden für spezielle Anwendungen 8. Photodiodes for Special Applications Tk = 2 5 C r A = 25 C 8.2 Zwei- und Vierfach-Fotodioden Package Radiant sensitive area ? K„ = 5 V , £ v = 1000 Ix, standard light A
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Q62702-P270
Q62702-P17-S1
BPY11
Q60215-Y111-S5
Q62702-P51
Q60215-Y67
Q60215-Y65
Q60215-Y63-S1
Q62607-S60
Q62607-S61
BPY 10
C 82
siemens SFH nm
Bpy 43
Q60215-Y65
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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lg 6154
Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp
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Q60215-Y62
O60215-Y63-S1
Q60215-Y65
Q60215-Y66
Q60215-Y67
Q60215-Y111-S4
Q60215-Y111-S5
Q60215-Y1111
Q60215-Y1112
Q60215-Y1113
lg 6154
KTY 10-8
DL1416
KTY 20-5
DL440
O62902-B156-F222
Q62901-B64
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SFH 255 FA
Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite
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068000-A5018
Q68000-A5017
Q68000-A5707
Q62703-N26
Q62703-N51
Q62703-N52
Q68000-A7302
Q68000-A7303
Q68000-A7304
Q68000-A8086
SFH 255 FA
LR 2703
LY3360K
dl340m
FP310L100-75
Q68000-A8452
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Untitled
Abstract: No abstract text available
Text: Si-Fotodetektoren 8.2 Silicon Photodetectors Zwei- und Vierfach-Fotodioderi Package <t> Type 8.2 Radiant sensitive *ab4 /95 area SFH 234S ±55 2m al/times 2 4 (^ 1 5 ) ±60 0 5 Q62702-P270 35 0 1( s t ) 3 5 0 . 1050 1 Q62702-P211 36 4m al/times 1X1 0.2 (=S 1)
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Q62702-P270
Q62702-P211
Q62702-P212
5-Y111-S4
60215-Y111-S5
Q62702-P51
400nm
BPY64P
15-Y67
PY48P
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SFH302
Abstract: SFH203 IRF 426
Text: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Outline drawings in mm Maßbilder (in mm) Figure 1 S u r 'a c e no* f la t in i Ö! °! Q .8 n a x ° G 1 GND 9.0 y t ' 0.5 S. ¡ 5.9 7.8 7.5 oo m ö o ¡ f t 1 C athode
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GE006270
SFH302
SFH203
IRF 426
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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Untitled
Abstract: No abstract text available
Text: SIEMENS Sjlizium-Fotoelement Silicon Photovoltaic Cell BPY 11 P Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1060 nm • Kathode = Chipunterseite
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BPY11
235bG5
flE3Sb05
GG573ci3
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