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    BPY64P Search Results

    BPY64P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPY64P Siemens Silicon Photovoltaic Cell Original PDF
    BPY64P Siemens Silicon Photovoltaic Cell Original PDF

    BPY64P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VARTA 20DK

    Abstract: BPX81 circuit infrared phototransistor for tv BPY62 VARTA 60 dk 20DK BPY62 application VARTA 3.6 v 70 ma Phototransistors Sunny Oscillators
    Text: General Photoelectric Applications Circuits Appnote 36 1. Suppression of DC Component in Photocurrent of Phototransistors Due to the by-passing of the base-emitter junction of T2 by capacitor C1, this control mechanism is ineffective during rapid changes. The cut-off frequency above, at which the control


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    PDF

    TAA761A

    Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
    Text: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,


    Original
    PDF LD261 BPX81. TAA761A TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238

    LP250

    Abstract: No abstract text available
    Text: BPY64P SIEMENS Silicon Photovoltaic Cell FEATURES • For applications from 420 nm to 1060 nm HA/lx 850 nm Sensitivity, Spectral Range X 420 tOl060 S - 10% of SmaX Radiant Sensitive Area A 0.36 ? c rrr Radiant Sensitive Area Dimensions LxW 5.98x5.98 mm Half Angle


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    PDF BPY64P BPY64P 18-pln fl535t LP250

    BPY64

    Abstract: Q60215-Y67
    Text: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY 64 P Anode red * Max. solder areas on front and back side gsoo 6636 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherw ise specified. Wesentliche Merkmale


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    PDF GS006636 BPY64 Q60215-Y67

    tic 1060

    Abstract: No abstract text available
    Text: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell D io d e and s o ld e r pods A c tiv e a re a BPY 64 P la c q u e re d Cvl I t J 66-4 u .2 S tr a n d s ^ 0^0 tO llT i ö lö s o ld e re d I 2 . 5 '1 J—1 '• — ■• •• 0 0 .5 5 / 00.5 3 .0


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    PDF 9G990OSJ BPY64P tic 1060

    lg 6154

    Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
    Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp


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    PDF Q60215-Y62 O60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q60215-Y111-S4 Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 lg 6154 KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64

    SFH 255 FA

    Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
    Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite


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    PDF 068000-A5018 Q68000-A5017 Q68000-A5707 Q62703-N26 Q62703-N51 Q62703-N52 Q68000-A7302 Q68000-A7303 Q68000-A7304 Q68000-A8086 SFH 255 FA LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452

    Untitled

    Abstract: No abstract text available
    Text: Si-Fotodetektoren 8.2 Silicon Photodetectors Zwei- und Vierfach-Fotodioderi Package <t> Type 8.2 Radiant sensitive *ab4 /95 area SFH 234S ±55 2m al/times 2 4 (^ 1 5 ) ±60 0 5 Q62702-P270 35 0 1( s t ) 3 5 0 . 1050 1 Q62702-P211 36 4m al/times 1X1 0.2 (=S 1)


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    PDF Q62702-P270 Q62702-P211 Q62702-P212 5-Y111-S4 60215-Y111-S5 Q62702-P51 400nm BPY64P 15-Y67 PY48P

    BPX48

    Abstract: SFH291 SFH100 fh205 BPW-21 SFH 314 fotodioden SFH317 bpx90 SFH2030
    Text: Si-Fotodetektoren Silicon Photodetectors Typenübersicht Summary of Types 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors S ' y •- S BP 103 SFH 302 S F H 50 6 BPX81 BPX 83 SFH 305 V BP X 90/F BPX 38 BP 103 B/BF SFH 313/FA


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    PDF 313/FA 314/FA BPY62 BPX81 310/FA 303/F 317/F 213/FA 214/FA BPX48/F BPX48 SFH291 SFH100 fh205 BPW-21 SFH 314 fotodioden SFH317 bpx90 SFH2030

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B