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    LD261 Search Results

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    LD261 Price and Stock

    ams OSRAM Group LD-261

    EMITTER IR 950NM 50MA 2-DIP
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    ams OSRAM Group LD-261-5-6

    EMITTER IR 950NM 50MA 2-DIP
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    Samtec Inc DW-12-15-L-D-261

    CONN HDR 24POS 0.1 STACK T/H
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    Avnet Americas DW-12-15-L-D-261 Bulk 1
    • 1 $3.22
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    Mouser Electronics DW-12-15-L-D-261
    • 1 $3.22
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    Newark DW-12-15-L-D-261 Bulk 1
    • 1 $3.14
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    Master Electronics DW-12-15-L-D-261
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    Sager DW-12-15-L-D-261 255 1
    • 1 $3.39
    • 10 $3.39
    • 100 $2.35
    • 1000 $1.61
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    JRH Electronics DW-12-15-L-D-261

    CONN HDR 24POS 0.1 STACK T/H
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    Samtec Inc DW-02-10-L-D-261

    FLEXIBLE BOARD STACKING HEADER W
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    LD261 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LD261 Infineon Technologies GaAs IRED, High reliability, Same package as BPX 81, Miniature package Original PDF
    LD261 OSRAM Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR ARRAY 950NM MINI TH Original PDF
    LD 261 OSRAM Interface Misc, GaAs Infrared Emitter Original PDF
    LD261 Siemens GaAs Infrared Emitter Original PDF
    LD261 Siemens GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Original PDF
    LD261-4 Siemens GaAs Infrared Emitter Original PDF
    LD2614444 Siemens INFRARED EMITTER SINGLE AND ARRAYS Scan PDF
    LD261-5 Infineon Technologies GaAs IRED, High reliability, Same package as BPX 81, Miniature package Original PDF
    LD261-5 Siemens GaAs Infrared Emitter Original PDF
    LD261-5 Siemens GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Original PDF
    LD261-5/6 OSRAM Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR ARRAY 950NM MINI TH Original PDF
    LD261-5/6 OSRAM GaAs Infrared Emitter Original PDF
    LD 261-5/6 OSRAM Opto Semiconductors Optoelectronics - Infrared, UV, Visible Emitters - EMITTER IR 950NM 50MA 6-SDIP Original PDF
    LD 261-6 OSRAM Interface Misc, GaAs Infrared Emitter Original PDF

    LD261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vqe24

    Abstract: VQE14 VQE23 MB111 TIL78 VQA13 VQB28 TIL414 VQA13-1 OPTOKOPPLER
    Text: RFT VQA10 Beschreibung Siemens LED, 5 mm, TSN-rot, Gehäuse diffus LS5160 rot Hewlett Packard General Instruments Telefunken Texas Instruments Toshiba Valvo HLMP-3300 (MV5753) TLUG5400 (TIL228) (TLS154) CQX51 VQA13 LED, 5 mm, rot, Gehäuse diffus klar VQA13-1 LED, 5 mm, rot, Gehäuse diffus rot LR5160 HLMP-3000 MV5054A TLUR5400 (TIL220)


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    PDF VQA10 LS5160 HLMP-3300) MV5753) TLUG5400 TIL228) TLS154) CQX51 VQA13 VQA13-1 vqe24 VQE14 VQE23 MB111 TIL78 VQB28 TIL414 OPTOKOPPLER

    TAA761A

    Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
    Text: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,


    Original
    PDF LD261 BPX81. TAA761A TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238

    SFH317-2

    Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
    Text: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2


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    PDF SFH320-2 SFH320-3 SFH320F-2 SFH320F-3 BP103B-2 BP103B-3 BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH317-2 SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a

    LD261-4

    Abstract: LD261-5 LD269 lfl-10
    Text: SIEMENS CMPNTS-i OPTO 25E D • âS3b3Sb 0G04E3S LD 261 SERIES S IE M E N S IN F R A R E D EMITTER SINGLE AND ARRAYS -40 to +80 Storage Temperature Soldering Temperature Distance from soldering joint FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and


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    PDF 0Q04E3S LD269 23b32ti QG0453b -30-20-fl 3010S LD261-4 LD261-5 lfl-10

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS LD 261 LD 262—269/260 s in g l e d io d e arrays Infrared Emitters Dimensions in inches mm APPLICATIONS • Miniature photointerrupters • Punched tape-readers • Industrial electronics • For control and drive circuits DESCRIPTION The LD260-269 series, GaAs infrared emitting diodes,


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    PDF LD260-269 lE/lE100 OHR0I039 LD260-269

    8PX43

    Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
    Text: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.


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    PDF SFH420 SFH421 BP104 BP103. SFH205, BP104, BP103B. LD271 LD271L LD274-1 8PX43 SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275

    44e 003

    Abstract: No abstract text available
    Text: MME D SIEMENS CMPNTSi OPTO • Û23b32b QQOSlQfl b B S I E X SIEM ENS LD 261 SERIES INFRARED EMITTER SINGLE AND ARRAYS T - m -u Package Dimensions in Inches mm Single Unit ^ ]¿ t¿ s Maximum Ratings FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and


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    PDF 653b32b 44e 003

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    lg 6154

    Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
    Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp


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    PDF Q60215-Y62 O60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q60215-Y111-S4 Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 lg 6154 KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64

    Untitled

    Abstract: No abstract text available
    Text: MME D SIEMENS CMPNTS-, OPTO • Û23b32b QQOSlOfl b M S I E X SIEM ENS LD 261 SERIES INFRARED EMITTER SINGLE AND ARRAYS T - m -u Package Dimensions in Inches mm Single Unit 'zm Maximum Ratings FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and


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    PDF 23b32b LD261-4 LD261-5 -30-N-0

    T20 96 diode

    Abstract: LD260 LD261-5/6 LD262 LD261 diode
    Text: LD 261 LD 262-269/260 SINGLE DIODE ARRAYS Infrared Emitters Dimensions in Inches mm GE006367 FEATURES • GaAs IR emltterdiode, made In a liquid phase epitaxy process • High reliability • Matches BPX 80-89 photofransistors • Availability: "A” Dimension (in mm)


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    PDF GE006367 LD261 LD262 LD263 LD260 electronic50 lp-50 LD260-26B T20 96 diode LD261-5/6 LD261 diode

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdiode G a A s Infrared Emitter 1 fla s h LD 261 2.8 4 not tru e to size . A p p ro x. w eigh t 0.0 3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • G aA s-IR -Lum ineszenzdiode, hergestellt im


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    PDF 00S77b3

    TIL702

    Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
    Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or


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    PDF LCC4230-D EPN4050 TIL702 TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6

    s75 transistor

    Abstract: BPX81-4 Diode s75 BPX-80 BPX81 BPX80
    Text: BPX81 ARRAYS BPX82-89, 80 SIEMENS SINGLE DIODE 2-10 DIP SILICON NPN PHOTOTRANSISTOR Ràckage Dimensions in Inches mm .094 (2.4) .083(2.1) Dimension “A". Mm. Max, Part Ni>. BPX82 .177 (4.6) BPX89 :» *X 8 4 •BPX85 8PX 86 •S75 (7.0) 3Î7 W 47« (12.1)


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    PDF BPX81 BPX82-89, BPX82 BPX89 BPX85 BPX88 PPX80 Photocurrent-BPX81 nt-BPX81 BPX81. s75 transistor BPX81-4 Diode s75 BPX-80 BPX80

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B

    Q62703-Q66

    Abstract: LD 263
    Text: IR-Lumineszenzdioden Infrared Emitters 1. GaAs-IRED 1. GaAs IRED 1.1 im Plastikgehäuse Xpeak = 950 nm Vf = 1 ,3 V (/f = 100 mA) 1.1 in plastic package (Xpeak = 950 nm) VT = 1.3 V ( / F = 100 mA) h Bestellnum m er deg. mW/sr O rdering code ±30 2 . . . 6.3


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    PDF 62703-Q395 Q62703-Q66 Q62703 Q62703-Q70 Q62703-Q71 Q62703-Q72 Q62703-Q73 Q62703-Q74 Q62703-Q75 Q62703-Q76 LD 263