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    BS616LV4025BI Search Results

    BS616LV4025BI Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV4025BI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable Original PDF
    BS616LV4025BI-55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable Original PDF
    BS616LV4025BI-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable Original PDF

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    BS616LV4025

    Abstract: BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
    Text: Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BSI BS616LV4025 „ FEATURES „ DESCRIPTION • Operation voltage : 4.5~5.5V • Low power consumption : Vcc = 5.0V C-grade: 45mA Max. operating current I-grade : 50mA (Max.) operating current


    Original     		BS616LV4025 x8/x16 BS616LV4025 R0201-BS616LV4025 -40oC 8x10mm) BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI PDF

    BS616LV4025

    Abstract: BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4025 „ DESCRIPTION „ FEATURES • Operation voltage : 4.5~5.5V • Low power consumption : Vcc = 5.0V C-grade: 45mA Max. operating current I-grade : 50mA (Max.) operating current


    Original     		BS616LV4025 x8/x16 BS616LV4025 R0201-BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI PDF