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    BS616UV4016 Search Results

    BS616UV4016 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616UV4016 Brilliance Semiconductor Asynchronous 4M(256K x 16) bits Static RAM Original PDF
    BS616UV4016-10 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM Original PDF
    BS616UV4016-85 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM Original PDF
    BS616UV4016AC Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AC10 Brilliance Semiconductor Ultra Low Power CMOS SRAM 256K x 16 bit Original PDF
    BS616UV4016AC-10 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AC-85 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016ACG10 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016ACG85 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016ACP10 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016ACP85 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AI Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AI-10 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AI-85 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AIG10 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AIG85 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AIP10 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016AIP85 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016DC Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 256K x 16-Bit Original PDF
    BS616UV4016DC10 Brilliance Semiconductor Ultra Low Power CMOS SRAM 256K x 16 bit Original PDF

    BS616UV4016 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BGA-48-0608

    Abstract: BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016EC BS616UV4016EI
    Text: Ultra Low Power CMOS SRAM 256K X 16 bit BS616UV4016 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V y Ultra low power consumption : VCC = 2.0V


    Original     		BS616UV4016 100ns x8/x16 R0201-BS616UV4016 BGA-48-0608 BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016EC BS616UV4016EI PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Power CMOS SRAM 256K X 16 bit BS616UV4016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V


    Original     		BS616UV4016 100ns x8/x16 II-44 R0201-BS616UV4016 PDF

    BGA-48-0608

    Abstract: BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016DI BS616UV4016EC BS616UV4016EI TSOP2-44
    Text: Preliminary Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI BS616UV4016 „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 10mA (FMax.) operating current


    Original     		BS616UV4016 100ns V4016 -40oC TSOP2-44 R0201-BS616UV4010 R0201-BS616UV4016 BGA-48-0608 BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016DI BS616UV4016EC BS616UV4016EI TSOP2-44 PDF

    BS616UV4016

    Abstract: BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016EC BS616UV4016EI
    Text: Ultra Low Power CMOS SRAM 256K X 16 bit BS616UV4016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V


    Original     		BS616UV4016 100ns x8/x16 oper201-BS616UV4016 R0201-BS616UV4016 BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016EC BS616UV4016EI PDF

    TSOP2-44

    Abstract: BS616UV4016DC BS616UV4016DI BS616UV4016EC BS616UV4016EI BGA-48-0608 BS616UV4016 BS616UV4016AC BS616UV4016AI
    Text: Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI BS616UV4016 „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 10mA (FMax.) operating current


    Original     		BS616UV4016 100ns TSOP2-44 R0201-BS616UV4016 TSOP2-44 BS616UV4016DC BS616UV4016DI BS616UV4016EC BS616UV4016EI BGA-48-0608 BS616UV4016 BS616UV4016AC BS616UV4016AI PDF

    LB1616

    Abstract: BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016DI BS616UV4016EC BS616UV4016EI TSOP 2-44
    Text: Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BSI Ÿ Ÿ Ÿ Ÿ n FEATURES Ÿ Wide VCC operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V VCC_min.=1.65V at 25OC Ÿ Ultra low power consumption : VCC = 2.0V C-grade : 10mA(Max.) operating current


    Original     		100ns BS616UV4016 x8/x16 R0201-BS616UV4016 TSOP2-44 LB1616 BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016DI BS616UV4016EC BS616UV4016EI TSOP 2-44 PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BSI Ÿ Ÿ Ÿ Ÿ n FEATURES Ÿ Wide VCC operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V VCC_min.=1.65V at 25OC Ÿ Ultra low power consumption : VCC = 2.0V C-grade : 10mA(Max.) operating current


    Original     		100ns BS616UV4016 x8/x16 R0201-BS616UV4016 TSOP2-44 PDF