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    K6F1616 Price and Stock

    ARCOTEK K6F1616U6A-EF55T

    SRAM ASYNC SLOW 16M 1Mx16 3V 48-
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    DigiKey K6F1616U6A-EF55T Reel 100
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    • 100 $6.5
    • 1000 $6
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    Samsung Semiconductor K6F1616R6C-FF70

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    Bristol Electronics K6F1616R6C-FF70 3,615
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    Samsung Semiconductor K6F1616U6AEF55000

    STANDARD SRAM, 1MX16, 55NS, CMOS, PBGA48
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    Quest Components K6F1616U6AEF55000 127
    • 1 $22.6
    • 10 $22.6
    • 100 $19.21
    • 1000 $18.08
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    Samsung Semiconductor K6F1616U6AEF70

    IC,SRAM,1MX16,CMOS,BGA,48PIN,PLASTIC
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    Quest Components K6F1616U6AEF70 27
    • 1 $37.96
    • 10 $36.062
    • 100 $34.164
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    Samsung Semiconductor K6F1616U6A-EF55

    1M X 16 STANDARD SRAM, 55 ns, PBGA48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components K6F1616U6A-EF55 7
    • 1 $18.765
    • 10 $16.68
    • 100 $16.68
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    K6F1616 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6F1616R6A-EF70 Samsung Electronics 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616R6C Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616R6C-F Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616R6C-FF70 Samsung Electronics 1M x16-Bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616R6M Family Samsung Electronics 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet Original PDF
    K6F1616T6B Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616T6B-EF55 Samsung Electronics 1M x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616T6B-EF70 Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616T6B-F Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616T6B-TF55 Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616T6B-TF70 Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616T6C Samsung Electronics Original PDF
    K6F1616T6C-F Samsung Electronics Original PDF
    K6F1616T6C-FF55 Samsung Electronics Original PDF
    K6F1616T6C-FF70 Samsung Electronics Original PDF
    K6F1616U6A Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616U6A-EF55 Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616U6A-EF70 Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616U6A-F Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616U6A Family Samsung Electronics 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet Original PDF

    K6F1616 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tba 2003

    Abstract: K6F1616U6C-FF70 K6F1616 K6F1616U6C
    Text: Preliminary CMOS SRAM K6F1616U6C Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark November 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F1616U6C 58/Typ. 32/Typ. tba 2003 K6F1616U6C-FF70 K6F1616

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K6F1616U6B Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 29, 2002 Preliminary 0.1 Revise - Changed Typical IDR Data retention current from 4µA to 1µA


    Original     		PDF K6F1616U6B 55/Typ. 35/Typ.

    K6F1616U6A

    Abstract: K6F1616U6A-F
    Text: K6F1616U6A Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft September 11, 2001 Preliminary 1.0 Finalize - added 45ns product - changed ICC1 : 3mA to 2mA


    Original     		PDF K6F1616U6A 55/Typ. 35/Typ. K6F1616U6A-F

    K6F1616U6M

    Abstract: K6F1616U6M-F
    Text: Preliminary K6F1616U6M Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 22, 2000 Preliminary 0.1 Revise - Change package type : from FBGA to TBGA


    Original     		PDF K6F1616U6M 55/Typ. 35/Typ. K6F1616U6M-F

    Untitled

    Abstract: No abstract text available
    Text: K6F1616R6C Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft November 17, 2003 Preliminary 0.1 Revised - Changed ball name of E3 Vss & H6 (DNU) to NC.


    Original     		PDF K6F1616R6C

    Untitled

    Abstract: No abstract text available
    Text: K6F1616U6A Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 - Initial draft September 11, 2001 Preliminary 1.0 - Finalize - added 45ns product - changed ICC1 : 3mA to 2mA


    Original     		PDF K6F1616U6A 55/Typ. 35/Typ.

    K6F1616R6A-EF70

    Abstract: No abstract text available
    Text: Preliminary K6F1616R6A Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark September 12, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F1616R6A 58/Typ. 32/Typ. K6F1616R6A-EF70

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K6F1616R6M Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 22, 2000 Preliminary 0.1 Revise - Change the package type from FBGA to TBGA


    Original     		PDF K6F1616R6M 55/Typ. 35/Typ.

    K6F1616U6A

    Abstract: K6F1616U6A-F K6F1616U6A-EF70 K6F1616U6A-EF
    Text: Preliminary K6F1616U6A Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark September 11, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F1616U6A 58/Typ. 32/Typ. K6F1616U6A-F K6F1616U6A-EF70 K6F1616U6A-EF

    K6F1616U6C-XF55

    Abstract: K6F1616U6C-FF55 K6F1616U6C-FF70 K6F1616U6CXF55 k6f1616u6c-xf70 K6F1616U6C
    Text: K6F1616U6C Family CMOS SRAM 16Mb 1M x 16 bit Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.


    Original     		PDF K6F1616U6C K6F1616U6C-XF55 K6F1616U6C-FF55 K6F1616U6C-FF70 K6F1616U6CXF55 k6f1616u6c-xf70

    48-TSOP1-1220F

    Abstract: 48 TSOP1 1220F K6F1616T6B K6F1616T6B-F
    Text: K6F1616T6B Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft May 21, 2003 Preliminary 0.1 Revised - Changed Isb1 max. from 25uA to 15uA


    Original     		PDF K6F1616T6B 48-TBGA K6F16iew 55/Typ. 35/Typ. 48-TSOP1-1220F 48 TSOP1 1220F K6F1616T6B-F

    K6F1616T6C

    Abstract: K6F1616T6C-F
    Text: Preliminary CMOS SRAM K6F1616T6C Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark November 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F1616T6C 58/Typ. 32/Typ. K6F1616T6C-F

    Untitled

    Abstract: No abstract text available
    Text: K6F1616U6M Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 22, 2000 Preliminary 0.1 Revise - Change package type : from FBGA to TBGA


    Original     		PDF K6F1616U6M 48-TBGA 58/Typ. 32/Typ.

    K6F1616R6B

    Abstract: K6F1616
    Text: K6F1616R6B Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 29, 2002 Preliminary 0.1 Finalize - Added 55ns speed bin - Changed Icc2 @70ns : 25mA to 22mA


    Original     		PDF K6F1616R6B 55/Typ. 35/Typ. K6F1616

    Untitled

    Abstract: No abstract text available
    Text: K6F1616R6M Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 22, 2000 Preliminary 0.1 Revise - Change the package type from FBGA to TBGA


    Original     		PDF K6F1616R6M 48-TBGA 58/Typ. 32/Typ.

    Untitled

    Abstract: No abstract text available
    Text: K6F1616V6B Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 11, 2003 Preliminary 1.0 Finalized - Changed ISB1 from 25uA to 20uA - Changed IDR from 15uA to 10uA


    Original     		PDF K6F1616V6B 35/Typ. 55/Typ.

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    K6H1616U6A-EF25

    Abstract: K6H1616U6A
    Text: Preliminary K6H1616U6A Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 18, 2001 Advanced 0.1 Revise - Changed ICC2 from 40 to 45mA.


    Original     		PDF K6H1616U6A K6F1616U6B K6H1616U6A. 35/Typ. 55/Typ. K6H1616U6A-EF25

    K6X8016T3B-UF55

    Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
    Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm


    Original     		PDF AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN