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    BS616UV4020DC Search Results

    BS616UV4020DC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616UV4020DC Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable Original PDF

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    sae a14

    Abstract: BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
    Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ FEATURES BS616UV4020 „ DESCRIPTION • Wide Vcc operation voltage : 2.0 ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current


    Original     		BS616UV4020 120ns 150ns R0201-BS616UV4020 -40oC 8x10mm) sae a14 BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI PDF

    BS616UV4020

    Abstract: BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current


    Original     		100ns x8/x16 R0201-BS616UV4020 BS616UV4020 BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI PDF