BU2522AX
Abstract: BU2522 NPN Transistor 1500V transistor 800V 1A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2522AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of pc
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BU2522AX
100mA;
BU2522AX
BU2522
NPN Transistor 1500V
transistor 800V 1A
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BU2522A
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification BU2522A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors. PINNING PIN
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BU2522A
BU2522A
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BU2520A
Abstract: BU2522A BU2522AF BY228
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522A
BU2520A
BU2522A
BU2522AF
BY228
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BU2522DX
Abstract: No abstract text available
Text: JOYVIRTUE BU2522DX Silicon Diffused Power Transistor General Description New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features
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BU2522DX
BU2522DX-LF
BU2522DX
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BU2522AF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AF
BU2522AF
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BU2520AF
Abstract: BU2522AF BU2522DX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2522DX
BU2520AF
BU2522AF
BU2522DX
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BU2522AX
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2522AX Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION
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BU2522AX
BU2522AX
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BU2522AF
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification BU2522AF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors. PINNING PIN
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BU2522AF
BU2522AF
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BU2520
Abstract: BU2522 BU2520AF BU2522A BU2522AF BY228
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AF
BU2520
BU2522
BU2520AF
BU2522A
BU2522AF
BY228
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BU2522AF
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2522AF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION
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BU2522AF
BU2522AF
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BU2522AX
Abstract: BU2520AF BU2522A BU2522AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AX
BU2522AX
BU2520AF
BU2522A
BU2522AF
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BU2520AF
Abstract: BU2522AF BU2522DF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2522DF
BU2520AF
BU2522AF
BU2522DF
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BU2520A
Abstract: BU2522A BU2522AW BU2522AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AW
BU2520A
BU2522A
BU2522AW
BU2522AF
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BU2522A
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522A
7110fl2b
BU2522A
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
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bb53R31
002flbi1fl
BU2522AF
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TCA700
Abstract: 0esm
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2522DX
Dio100
100PD
TCA700
0esm
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2522DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2522DX
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BU2522AF
Abstract: BY228
Text: N AMER PHILIPS/DISCRETE b*ïE D • bbS3^31 002ôbi4ê Philips Sem iconductors SOS MAPX Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
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BU2522AF
BU2522AF
BY228
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AX
1E-02
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AW
1E-04
IE-02
1E-06
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AX
1E-06
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2522DF
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2522DF
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