BU4508DF
Abstract: power TRANSISTOR 800V 5A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4508DF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU4508DF
100mA;
600mA;
BU4508DF
power TRANSISTOR 800V 5A
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BU4508AZ
Abstract: bu4508af bu4508
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
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BU4508AZ
BU4508AZ
bu4508af
bu4508
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BU4508AX
Abstract: BU4508AF transistor BU4508AF BU4508 BU4508aX equivalent
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
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BU4508AX
BU4508AX
BU4508AF
transistor BU4508AF
BU4508
BU4508aX equivalent
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BU4508DF
Abstract: BU4508 BU4508D
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4508DF
BU4508DF
BU4508
BU4508D
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BU4508DZ
Abstract: bu4508df BU4508D BU4508 BU4508AZ bu4508dfx
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
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BU4508DZ
BU4508DZ
bu4508df
BU4508D
BU4508
BU4508AZ
bu4508dfx
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BU4508AF
Abstract: transistor BU4508AF
Text: DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor
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BU4508AF
SCA60
135104/150/03/pp12
BU4508AF
transistor BU4508AF
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BU4508DX
Abstract: transistor bu4508dx BU4508 BU4508DX Transistor Horizontal
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4508DX
BU4508DX
transistor bu4508dx
BU4508
BU4508DX Transistor Horizontal
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BU4508DZ
Abstract: BU4508
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers
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BU4508DZ
BU4508DZ
BU4508
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BU4508DX
Abstract: transistor bu4508dx BU4508DX equivalent BU4508AF bu4508df BU4508 equivalent bu4508dx BU4508D BU4508DX Transistor Horizontal bu4508dfx
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4508DX
BU4508DX
transistor bu4508dx
BU4508DX equivalent
BU4508AF
bu4508df
BU4508
equivalent bu4508dx
BU4508D
BU4508DX Transistor Horizontal
bu4508dfx
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BU4508DF
Abstract: bu4508dfx BU4508AF Philips fr 153 30 BU4508D
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4508DF
BU4508DF
bu4508dfx
BU4508AF
Philips fr 153 30
BU4508D
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BU4508DF
Abstract: BU4508D
Text: SavantIC Semiconductor Product Specification BU4508DF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.
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BU4508DF
To00mA
600mA
BU4508DF
BU4508D
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BU4508DX
Abstract: transistor bu4508dx BU4508DX equivalent BU4508 BU4508DX-LF BU4508DX Transistor Horizontal
Text: JOYVIRTUE BU4508DX Silicon Diffused Power Transistor General Description Enhanced performance, new generation, high-voltage, high-speed, switching npn transistor with an integrated damper diode in a plastic full-pack enevlope intended for use in horizontal deflection circuits of colour television
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BU4508DX
BU4508DX-LF
BU4508DX
transistor bu4508dx
BU4508DX equivalent
BU4508
BU4508DX-LF
BU4508DX Transistor Horizontal
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BUT11APX equivalent
Abstract: diode BY229 BUT11APX BU4508DX plasma tv ic BU2720DX BUT11APX-1200 BU4507DX BU4508DX equivalent BU2520DF
Text: Bipolar power diodes and transistors for TV Understanding PFC - TV applications What is Power Factor Correction PFC Ñ It can be defined as the reduction of the harmonic content, and/or the aligning of the phase angle of incoming current Ñ PFC is required to reduce disturbance on the AC distribution
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bra785
IEC1000-3-2/EN61000-3-2
80plus
JICC61000-3-2
BUT11APX equivalent
diode BY229
BUT11APX
BU4508DX
plasma tv ic
BU2720DX
BUT11APX-1200
BU4507DX
BU4508DX equivalent
BU2520DF
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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4508DX
Abstract: 4508D BU4508DX BU4508 power t
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith an integrated d am per diode in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television
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BU4508DX
4508DX
4508D
BU4508DX
BU4508
power t
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BU4508DF
Abstract: BU4508D RANSISTOR
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith an integrated d am per diode in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television
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BU4508DF
BU4508DF
BU4508D
RANSISTOR
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BU4508DZ
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers
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BU4508DZ
BU4508DZ
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BU4508AF
Abstract: transistor BU4508AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
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BU4508AF
100-P
/PD25
BU4508AF
transistor BU4508AF
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BU4508DX
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4508DX
BU4508DX
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BU4508DF
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4508DF
BU4508DF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
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BU4508AZ
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BU4508AX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
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BU4508AX
16kHz_
100Pc/PD25C_
BU4508AX
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BU4508D
Abstract: BU4508DZ
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith an integrated d am per diode in a plastic envelope intended fo r use in horizontal deflection circuits of colour television receivers.
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BU4508DZ
BU4508D
BU4508DZ
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BU2508-AX
Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX
Text: Philips Semiconductors Power Bipolar Transistors Index Types added to the range since the last issue of Handbook SC06 are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 42 BU2520AF 206 BU2722AF 391 BU505D 42 BU2520AW 212 BU2722AX
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BU505
BU505D
BU505F
BU505DF
BU506
BU506D
BU506F
BU506DF
BU508AF
BU508AW
BU2508-AX
BU506D, BU1506DX, BU2506DF
BU2506DF
BU4508AF
BU4506DF
BU4508DF
BU4508DX
BU2725DX
BU2506DX
BU4525AX
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